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FCB20N60FTM-VB Product details
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FCB20N60FTM-VB MOSFET Product Introduction
FCB20N60FTM-VB is a high voltage N-channel MOSFET in TO263 package, suitable for high voltage and high current electronic applications. It has a drain-source voltage (VDS) of up to 650V and supports a gate-source voltage (VGS) of ±30V, ensuring stable operation under various operating conditions. The gate threshold voltage (Vth) of this MOSFET is 3.5V, allowing it to be reliably turned on and off under appropriate gate-source voltage. Its on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, ensuring efficient current transfer and low power loss. FCB20N60FTM-VB adopts SJ_Multi-EPI technology, which enhances its reliability and durability in high power applications.
FCB20N60FTM-VB is a high voltage N-channel MOSFET in TO263 package, suitable for high voltage and high current electronic applications. It has a drain-source voltage (VDS) of up to 650V and supports a gate-source voltage (VGS) of ±30V, ensuring stable operation under various operating conditions. The gate threshold voltage (Vth) of this MOSFET is 3.5V, allowing it to be reliably turned on and off under appropriate gate-source voltage. Its on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, ensuring efficient current transfer and low power loss. FCB20N60FTM-VB adopts SJ_Multi-EPI technology, which enhances its reliability and durability in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FCB20N60FTM-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 160mΩ @ VGS=10V
- **Drain current (ID): ** 20A
- **Technology type (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 160mΩ @ VGS=10V
- **Drain current (ID): ** 20A
- **Technology type (Technology): ** SJ_Multi-EPI
Domain and module applications：
FCB20N60FTM-VB MOSFET Applicable fields and application modules
FCB20N60FTM-VB MOSFET is particularly suitable for the following fields and application modules due to its high voltage withstand capability and low on-resistance:
1. **High-voltage switching power supply (SMPS):** Due to its high voltage withstand capability of 650V, FCB20N60FTM-VB is very suitable for use as the main switch in high-voltage switching power supplies. It can work stably under high voltage conditions, while the low on-resistance reduces power loss.
2. **Power converter:** Among various power converters (such as DC-DC converters, AC-DC converters), FCB20N60FTM-VB can handle high-voltage power conversion requirements, and its high voltage withstand performance ensures the stability and reliability of the system.
3. **Inverter:** Especially in high-power inverters (such as photovoltaic inverters), the high voltage handling capability and low on-resistance of FCB20N60FTM-VB enable it to effectively switch high voltage currents, optimizing the efficiency and performance of the inverter.
4. **Industrial Power Management:** In industrial power management systems, this MOSFET can be used in power regulation and distribution modules. Its high voltage resistance and low on-resistance ensure stable operation and high efficiency of the power system.
5. **Motor Drive:** In high-voltage motor drive applications, the high voltage resistance of FCB20N60FTM-VB makes it suitable for driving high-power motors, and can effectively control the high voltage and high current during the start-up and operation of the motor.
6. **High-voltage Protection Circuit:** In the high-voltage protection circuit, FCB20N60FTM-VB can effectively switch control and protect the circuit from overvoltage and overcurrent, thereby improving the safety and reliability of the system.
In short, FCB20N60FTM-VB MOSFET is an ideal choice for handling high voltage and high current applications due to its excellent high voltage tolerance and low power consumption characteristics. It is widely used in high power electronic devices such as switching power supplies, power converters, and inverters.
FCB20N60FTM-VB MOSFET is particularly suitable for the following fields and application modules due to its high voltage withstand capability and low on-resistance:
1. **High-voltage switching power supply (SMPS):** Due to its high voltage withstand capability of 650V, FCB20N60FTM-VB is very suitable for use as the main switch in high-voltage switching power supplies. It can work stably under high voltage conditions, while the low on-resistance reduces power loss.
2. **Power converter:** Among various power converters (such as DC-DC converters, AC-DC converters), FCB20N60FTM-VB can handle high-voltage power conversion requirements, and its high voltage withstand performance ensures the stability and reliability of the system.
3. **Inverter:** Especially in high-power inverters (such as photovoltaic inverters), the high voltage handling capability and low on-resistance of FCB20N60FTM-VB enable it to effectively switch high voltage currents, optimizing the efficiency and performance of the inverter.
4. **Industrial Power Management:** In industrial power management systems, this MOSFET can be used in power regulation and distribution modules. Its high voltage resistance and low on-resistance ensure stable operation and high efficiency of the power system.
5. **Motor Drive:** In high-voltage motor drive applications, the high voltage resistance of FCB20N60FTM-VB makes it suitable for driving high-power motors, and can effectively control the high voltage and high current during the start-up and operation of the motor.
6. **High-voltage Protection Circuit:** In the high-voltage protection circuit, FCB20N60FTM-VB can effectively switch control and protect the circuit from overvoltage and overcurrent, thereby improving the safety and reliability of the system.
In short, FCB20N60FTM-VB MOSFET is an ideal choice for handling high voltage and high current applications due to its excellent high voltage tolerance and low power consumption characteristics. It is widely used in high power electronic devices such as switching power supplies, power converters, and inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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