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FCA47N60_F109-VB Product details
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FCA47N60_F109-VB MOSFET Product Introduction
FCA47N60_F109-VB is a high voltage single N-channel MOSFET in TO3P package using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of up to 600V, suitable for use in high voltage environments. The MOSFET has an on-resistance of 60mΩ and can handle a drain current of up to 47A. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction at lower gate voltages. This MOSFET is designed to provide stable and reliable performance for high power and high voltage applications.
FCA47N60_F109-VB is a high voltage single N-channel MOSFET in TO3P package using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of up to 600V, suitable for use in high voltage environments. The MOSFET has an on-resistance of 60mΩ and can handle a drain current of up to 47A. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction at lower gate voltages. This MOSFET is designed to provide stable and reliable performance for high power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
1. **Package**: TO3P
- **Package type**: TO3P, this package is suitable for high-power applications and provides good heat dissipation and durability.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and current control applications, providing excellent switching performance and current carrying capacity.
3. **Drain-source voltage (VDS)**: 600V
- **Maximum drain-source voltage**: Supports drain-source voltage up to 600V, suitable for high-voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand gate voltage of ±30V, providing flexible gate drive options.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: The threshold voltage is 3.5V, ensuring effective conduction at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **On-resistance**: At a gate voltage of 10V, the on-resistance is 60mΩ, suitable for applications requiring high current carrying capacity.
7. **Maximum drain current (ID)**: 47A
- **Maximum continuous current**: Able to withstand a maximum drain current of 47A, suitable for high power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology type**: Adopts SJ_Multi-EPI technology, which optimizes voltage handling capability and on-resistance, providing high performance and stability.
1. **Package**: TO3P
- **Package type**: TO3P, this package is suitable for high-power applications and provides good heat dissipation and durability.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and current control applications, providing excellent switching performance and current carrying capacity.
3. **Drain-source voltage (VDS)**: 600V
- **Maximum drain-source voltage**: Supports drain-source voltage up to 600V, suitable for high-voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand gate voltage of ±30V, providing flexible gate drive options.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: The threshold voltage is 3.5V, ensuring effective conduction at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **On-resistance**: At a gate voltage of 10V, the on-resistance is 60mΩ, suitable for applications requiring high current carrying capacity.
7. **Maximum drain current (ID)**: 47A
- **Maximum continuous current**: Able to withstand a maximum drain current of 47A, suitable for high power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology type**: Adopts SJ_Multi-EPI technology, which optimizes voltage handling capability and on-resistance, providing high performance and stability.
Domain and module applications：
Application fields and module examples
The high voltage handling capability and high current carrying capacity of FCA47N60_F109-VB enable it to excel in multiple fields and modules:
1. **High voltage power switch**
In high voltage power switch systems, FCA47N60_F109-VB can be used for high voltage DC-DC converters and power switches. Its 600V drain-source voltage capability and 60mΩ on-resistance enable it to work stably in high voltage environments, improving system reliability and efficiency.
2. **Power inverter**
In power inverter applications, FCA47N60_F109-VB can be used for switching and power regulation of high voltage inverters. Its high drain-source voltage and high current carrying capacity ensure high efficiency and stability of the inverter, making it suitable for photovoltaic power generation systems and other high power inverters.
3. **Industrial Motor Control**
In industrial motor control systems, FCA47N60_F109-VB can be used for driving and controlling high-voltage motors. Its high voltage tolerance and good switching performance ensure the stable operation of high-voltage motors, and is suitable for high-power motors and drive systems.
4. **High-power Battery Management System**
In high-power battery management systems, FCA47N60_F109-VB can be used for battery switching control and power regulation. Its high current carrying capacity and 600V voltage support make it suitable for high-power battery systems such as electric vehicles and high-power energy storage systems.
5. **Power Conversion and Lighting Applications**
In high-voltage power conversion and lighting applications, FCA47N60_F109-VB can be used for lighting adjustment and power conversion. Its high voltage capability and stable switching characteristics improve the efficiency and performance of the system, and is suitable for high-voltage lighting systems and power conversion modules.
The high voltage withstand capability and high current carrying capability of the FCA47N60_F109-VB MOSFET enable it to perform well in high power and high voltage applications, meeting the needs of various high performance circuit designs.
The high voltage handling capability and high current carrying capacity of FCA47N60_F109-VB enable it to excel in multiple fields and modules:
1. **High voltage power switch**
In high voltage power switch systems, FCA47N60_F109-VB can be used for high voltage DC-DC converters and power switches. Its 600V drain-source voltage capability and 60mΩ on-resistance enable it to work stably in high voltage environments, improving system reliability and efficiency.
2. **Power inverter**
In power inverter applications, FCA47N60_F109-VB can be used for switching and power regulation of high voltage inverters. Its high drain-source voltage and high current carrying capacity ensure high efficiency and stability of the inverter, making it suitable for photovoltaic power generation systems and other high power inverters.
3. **Industrial Motor Control**
In industrial motor control systems, FCA47N60_F109-VB can be used for driving and controlling high-voltage motors. Its high voltage tolerance and good switching performance ensure the stable operation of high-voltage motors, and is suitable for high-power motors and drive systems.
4. **High-power Battery Management System**
In high-power battery management systems, FCA47N60_F109-VB can be used for battery switching control and power regulation. Its high current carrying capacity and 600V voltage support make it suitable for high-power battery systems such as electric vehicles and high-power energy storage systems.
5. **Power Conversion and Lighting Applications**
In high-voltage power conversion and lighting applications, FCA47N60_F109-VB can be used for lighting adjustment and power conversion. Its high voltage capability and stable switching characteristics improve the efficiency and performance of the system, and is suitable for high-voltage lighting systems and power conversion modules.
The high voltage withstand capability and high current carrying capability of the FCA47N60_F109-VB MOSFET enable it to perform well in high power and high voltage applications, meeting the needs of various high performance circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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