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FCA22N60N-VB Product details
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FCA22N60N-VB MOSFET Product Introduction
The FCA22N60N-VB is a high voltage N-Channel MOSFET in a TO3P package. It is designed to handle high voltage applications and has a maximum drain-to-source voltage (VDS) of 600V and a maximum gate-to-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, an improved multi-junction silicon technology designed to increase voltage tolerance and reduce on-resistance. Its on-resistance (RDS(ON)) is 190mΩ at VGS=10V, and supports a maximum continuous drain current (ID) of 20A. The FCA22N60N-VB is suitable for applications that require high voltage handling and stable switching performance.
The FCA22N60N-VB is a high voltage N-Channel MOSFET in a TO3P package. It is designed to handle high voltage applications and has a maximum drain-to-source voltage (VDS) of 600V and a maximum gate-to-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, an improved multi-junction silicon technology designed to increase voltage tolerance and reduce on-resistance. Its on-resistance (RDS(ON)) is 190mΩ at VGS=10V, and supports a maximum continuous drain current (ID) of 20A. The FCA22N60N-VB is suitable for applications that require high voltage handling and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
1. **Package**: TO3P
- **Package type**: TO3P, with excellent heat dissipation performance, suitable for high power and high voltage applications.
2. **Configuration**: Single channel N-Channel
- **Configuration**: Single channel N-Channel MOSFET, suitable for high voltage switching and control.
3. **VDS (Drain to Source Voltage)**: 600V
- **Maximum Voltage**: 600V, suitable for switching and control in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, allowing a wider gate drive range, suitable for a variety of gate control schemes.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point at which the MOSFET starts to conduct, ensuring stable switching performance.
6. **RDS(ON)（On-Resistance）**:
- **When VGS=10V**: 190mΩ
- **On-Resistance**: 190mΩ at 10V gate voltage, suitable for high current applications.
7. **ID（Continuous Drain Current）**: 20A
- **Maximum Current**: 20A, suitable for high voltage applications with medium current loads.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, providing high voltage handling capability and low on-resistance.
1. **Package**: TO3P
- **Package type**: TO3P, with excellent heat dissipation performance, suitable for high power and high voltage applications.
2. **Configuration**: Single channel N-Channel
- **Configuration**: Single channel N-Channel MOSFET, suitable for high voltage switching and control.
3. **VDS (Drain to Source Voltage)**: 600V
- **Maximum Voltage**: 600V, suitable for switching and control in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, allowing a wider gate drive range, suitable for a variety of gate control schemes.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point at which the MOSFET starts to conduct, ensuring stable switching performance.
6. **RDS(ON)（On-Resistance）**:
- **When VGS=10V**: 190mΩ
- **On-Resistance**: 190mΩ at 10V gate voltage, suitable for high current applications.
7. **ID（Continuous Drain Current）**: 20A
- **Maximum Current**: 20A, suitable for high voltage applications with medium current loads.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, providing high voltage handling capability and low on-resistance.
Domain and module applications：
Application Examples
The high voltage handling capability and moderate on-resistance of FCA22N60N-VB MOSFET make it excel in multiple high voltage application scenarios. Here are several typical application examples:
1. **High voltage switching circuit**:
- **Application**: The 600V maximum drain voltage of FCA22N60N-VB makes it an ideal choice for high voltage switching circuits. For example, it can be used for switching of high voltage power supplies to stably control and disconnect current to ensure the safety and stability of the system.
2. **Power management system**:
- **Application**: In high voltage power management systems, FCA22N60N-VB can be used for switching power modules. Its good on-performance and high voltage tolerance ensure the efficient and reliable operation of the power module.
3. **Power Inverter**:
- **Application**: FCA22N60N-VB can be used as a switching element in a power inverter for high voltage AC to DC conversion. Its high voltage tolerance and low on-resistance make it excel in power conversion applications.
4. **Electric Vehicle Power System**:
- **Application**: In the power system of an electric vehicle, FCA22N60N-VB can be used for battery management and power conversion. Its high voltage capability and stability make it play an important role in the power system of an electric vehicle.
5. **High Voltage Protection Circuit**:
- **Application**: FCA22N60N-VB is used in a high voltage protection circuit to prevent the circuit from being damaged by excessive voltage. Its high voltage tolerance can effectively protect the circuit from voltage shock.
The high voltage handling capability and stable on-resistance of the FCA22N60N-VB MOSFET make it an excellent choice for applications such as high voltage switching, power management and protection circuits.
The high voltage handling capability and moderate on-resistance of FCA22N60N-VB MOSFET make it excel in multiple high voltage application scenarios. Here are several typical application examples:
1. **High voltage switching circuit**:
- **Application**: The 600V maximum drain voltage of FCA22N60N-VB makes it an ideal choice for high voltage switching circuits. For example, it can be used for switching of high voltage power supplies to stably control and disconnect current to ensure the safety and stability of the system.
2. **Power management system**:
- **Application**: In high voltage power management systems, FCA22N60N-VB can be used for switching power modules. Its good on-performance and high voltage tolerance ensure the efficient and reliable operation of the power module.
3. **Power Inverter**:
- **Application**: FCA22N60N-VB can be used as a switching element in a power inverter for high voltage AC to DC conversion. Its high voltage tolerance and low on-resistance make it excel in power conversion applications.
4. **Electric Vehicle Power System**:
- **Application**: In the power system of an electric vehicle, FCA22N60N-VB can be used for battery management and power conversion. Its high voltage capability and stability make it play an important role in the power system of an electric vehicle.
5. **High Voltage Protection Circuit**:
- **Application**: FCA22N60N-VB is used in a high voltage protection circuit to prevent the circuit from being damaged by excessive voltage. Its high voltage tolerance can effectively protect the circuit from voltage shock.
The high voltage handling capability and stable on-resistance of the FCA22N60N-VB MOSFET make it an excellent choice for applications such as high voltage switching, power management and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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