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FCA20N60S-VB Product details
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Product Introduction
FCA20N60S-VB is a high voltage N-channel MOSFET in TO3P package, designed for high voltage applications. It has a drain-source voltage (VDS) of 600V and a drain current (ID) of 20A, and an on-resistance of 190mΩ at a gate-source voltage (VGS) of 10V. Using SJ_Multi-EPI technology, FCA20N60S-VB provides excellent high voltage handling capability and reliable switching performance. This MOSFET is widely used in power electronic equipment and power conversion systems, and can operate stably in high voltage environments.
FCA20N60S-VB is a high voltage N-channel MOSFET in TO3P package, designed for high voltage applications. It has a drain-source voltage (VDS) of 600V and a drain current (ID) of 20A, and an on-resistance of 190mΩ at a gate-source voltage (VGS) of 10V. Using SJ_Multi-EPI technology, FCA20N60S-VB provides excellent high voltage handling capability and reliable switching performance. This MOSFET is widely used in power electronic equipment and power conversion systems, and can operate stably in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Converters**:
The 600V drain-source voltage of the FCA20N60S-VB makes it ideal for use in high voltage power converters, such as high voltage DC-DC converters (DC-DC converters). In these applications, it can effectively handle high voltage signals, ensure stable switching operation, and provide reliable performance in high voltage environments.
2. **Power Electronics Devices**:
In power electronics devices, such as power conditioners and power modules, the FCA20N60S-VB can withstand high voltages and provide stable switching performance. Its low on-resistance (190mΩ) helps reduce power losses and improve system efficiency and reliability.
3. **Industrial Power Management Systems**:
This MOSFET is suitable for high voltage power switching applications in industrial power management systems. In high voltage environments, it can ensure efficient operation of the system and support various industrial power control and management functions.
4. **Inverter Application**:
In inverter systems, the FCA20N60S-VB is able to handle high voltage input and efficiently convert power. Its stable switching performance and high voltage withstand capability make it an ideal choice for power inverter applications, especially in power conversion tasks that require high reliability.
The high voltage withstand capability and good switching performance of the FCA20N60S-VB enable it to perform well in applications that require high voltage withstand and high efficiency, providing a reliable solution for high voltage power management and power conversion.
1. **High Voltage Power Converters**:
The 600V drain-source voltage of the FCA20N60S-VB makes it ideal for use in high voltage power converters, such as high voltage DC-DC converters (DC-DC converters). In these applications, it can effectively handle high voltage signals, ensure stable switching operation, and provide reliable performance in high voltage environments.
2. **Power Electronics Devices**:
In power electronics devices, such as power conditioners and power modules, the FCA20N60S-VB can withstand high voltages and provide stable switching performance. Its low on-resistance (190mΩ) helps reduce power losses and improve system efficiency and reliability.
3. **Industrial Power Management Systems**:
This MOSFET is suitable for high voltage power switching applications in industrial power management systems. In high voltage environments, it can ensure efficient operation of the system and support various industrial power control and management functions.
4. **Inverter Application**:
In inverter systems, the FCA20N60S-VB is able to handle high voltage input and efficiently convert power. Its stable switching performance and high voltage withstand capability make it an ideal choice for power inverter applications, especially in power conversion tasks that require high reliability.
The high voltage withstand capability and good switching performance of the FCA20N60S-VB enable it to perform well in applications that require high voltage withstand and high efficiency, providing a reliable solution for high voltage power management and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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