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FCA20N60_F109-VB Product details
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FCA20N60_F109-VB MOSFET Product Introduction
FCA20N60_F109-VB is a high voltage N-channel MOSFET packaged in TO3P, suitable for electronic applications requiring high voltage and high current. With a drain-source voltage (VDS) of up to 600V and a gate-source voltage (VGS) of ±30V, this MOSFET can withstand large voltage and current loads. Its gate threshold voltage (Vth) is 3.5V, ensuring that it can be turned on and off at the appropriate gate-source voltage. The on-resistance (RDS(ON)) of FCA20N60_F109-VB is 60mΩ @ VGS=10V, providing excellent conductive performance and low power loss. The use of SJ_Multi-EPI technology enables it to have stable performance and high reliability in high-power applications.
FCA20N60_F109-VB is a high voltage N-channel MOSFET packaged in TO3P, suitable for electronic applications requiring high voltage and high current. With a drain-source voltage (VDS) of up to 600V and a gate-source voltage (VGS) of ±30V, this MOSFET can withstand large voltage and current loads. Its gate threshold voltage (Vth) is 3.5V, ensuring that it can be turned on and off at the appropriate gate-source voltage. The on-resistance (RDS(ON)) of FCA20N60_F109-VB is 60mΩ @ VGS=10V, providing excellent conductive performance and low power loss. The use of SJ_Multi-EPI technology enables it to have stable performance and high reliability in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
FCA20N60_F109-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO3P
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 600V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 60mΩ @ VGS=10V
- **Drain current (ID): ** 47A
- **Technology type (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO3P
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 600V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 60mΩ @ VGS=10V
- **Drain current (ID): ** 47A
- **Technology type (Technology): ** SJ_Multi-EPI
Domain and module applications：
FCA20N60_F109-VB MOSFET Applicable fields and application modules
The high withstand voltage and excellent conductivity of FCA20N60_F109-VB MOSFET make it very suitable for high voltage and high current application scenarios. The following are some application examples of specific fields and modules:
1. **High-voltage switching power supply (SMPS):** FCA20N60_F109-VB can be used as the main switching element in high-voltage switching power supplies. Its high VDS of up to 600V is suitable for efficient switching in high-voltage power supplies, while its 60mΩ RDS(ON) reduces power losses and improves system efficiency.
2. **Power converters:** In power converters such as AC-DC converters and DC-DC converters, the high withstand voltage and low on-resistance of FCA20N60_F109-VB enable it to handle high voltage and high current conversion requirements, providing stable and efficient power conversion.
3. **Inverter:** In photovoltaic inverters or other high-power inverters, this MOSFET can handle high voltage and current switching operations, helping to improve the efficiency of power conversion and the stability of the system.
4. **Industrial Power Management:** FCA20N60_F109-VB is suitable for industrial power management systems, such as power distribution and regulation modules. Its high voltage capability and high current handling capabilities enable it to cope with complex power management requirements.
5. **Motor Drive:** In high-voltage motor drive systems, the high withstand voltage and low on-resistance of FCA20N60_F109-VB make it an ideal choice for driving high-voltage motors, and can effectively handle the high voltage and high current during motor startup and operation.
6. **High-voltage Protection Circuit:** In high-voltage protection circuits, this MOSFET can effectively perform switching control to protect the circuit from overvoltage and overcurrent, thereby improving the safety and reliability of the system.
In summary, the FCA20N60_F109-VB MOSFET is suitable for various high-power, high-voltage application scenarios due to its high voltage tolerance, low on-resistance and high current capability, providing stable and reliable performance for electronic systems.
The high withstand voltage and excellent conductivity of FCA20N60_F109-VB MOSFET make it very suitable for high voltage and high current application scenarios. The following are some application examples of specific fields and modules:
1. **High-voltage switching power supply (SMPS):** FCA20N60_F109-VB can be used as the main switching element in high-voltage switching power supplies. Its high VDS of up to 600V is suitable for efficient switching in high-voltage power supplies, while its 60mΩ RDS(ON) reduces power losses and improves system efficiency.
2. **Power converters:** In power converters such as AC-DC converters and DC-DC converters, the high withstand voltage and low on-resistance of FCA20N60_F109-VB enable it to handle high voltage and high current conversion requirements, providing stable and efficient power conversion.
3. **Inverter:** In photovoltaic inverters or other high-power inverters, this MOSFET can handle high voltage and current switching operations, helping to improve the efficiency of power conversion and the stability of the system.
4. **Industrial Power Management:** FCA20N60_F109-VB is suitable for industrial power management systems, such as power distribution and regulation modules. Its high voltage capability and high current handling capabilities enable it to cope with complex power management requirements.
5. **Motor Drive:** In high-voltage motor drive systems, the high withstand voltage and low on-resistance of FCA20N60_F109-VB make it an ideal choice for driving high-voltage motors, and can effectively handle the high voltage and high current during motor startup and operation.
6. **High-voltage Protection Circuit:** In high-voltage protection circuits, this MOSFET can effectively perform switching control to protect the circuit from overvoltage and overcurrent, thereby improving the safety and reliability of the system.
In summary, the FCA20N60_F109-VB MOSFET is suitable for various high-power, high-voltage application scenarios due to its high voltage tolerance, low on-resistance and high current capability, providing stable and reliable performance for electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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