中文
English
FBE30S-VB Product details
Back to previous pageProduct introduction：
FBE30S-VB MOSFET Product Introduction
FBE30S-VB is a high voltage N-channel MOSFET packaged in TO263. It has excellent voltage resistance and a maximum drain-source voltage (VDS) of up to 800V, making it suitable for high voltage applications. The gate-source voltage (VGS) of this MOSFET is ±30V and the gate threshold voltage (Vth) is 3.5V. At VGS of 10V, the on-resistance (RDS(ON)) is 850mΩ, providing good conductivity and thermal stability. FBE30S-VB adopts SJ_Multi-EPI technology, which is suitable for use in environments with high voltage and high power requirements, and is widely used in power electronics and switching power supplies.
FBE30S-VB is a high voltage N-channel MOSFET packaged in TO263. It has excellent voltage resistance and a maximum drain-source voltage (VDS) of up to 800V, making it suitable for high voltage applications. The gate-source voltage (VGS) of this MOSFET is ±30V and the gate threshold voltage (Vth) is 3.5V. At VGS of 10V, the on-resistance (RDS(ON)) is 850mΩ, providing good conductivity and thermal stability. FBE30S-VB adopts SJ_Multi-EPI technology, which is suitable for use in environments with high voltage and high power requirements, and is widely used in power electronics and switching power supplies.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
FBE30S-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 850mΩ @ VGS=10V
- **Drain current (ID): ** 7A
- **Technology type (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 850mΩ @ VGS=10V
- **Drain current (ID): ** 7A
- **Technology type (Technology): ** SJ_Multi-EPI
Domain and module applications：
FBE30S-VB MOSFET Applicable fields and application modules
The high withstand voltage and good conductivity of FBE30S-VB MOSFET make it suitable for a variety of high voltage and high power application scenarios. Here are some application examples of specific fields and modules:
1. **High-voltage switching power supply (SMPS):** FBE30S-VB can be used as a switching element in a high-voltage switching power supply. Its high withstand voltage capability (800V) allows it to operate reliably in a high voltage environment, while its low on-resistance (850mΩ) reduces power loss and improves overall efficiency.
2. **Power converter:** In high-voltage power converters, such as AC-DC converters or DC-AC inverters, FBE30S-VB MOSFET is able to effectively handle large voltage changes and high power loads. Its high VDS and high withstand voltage enable it to provide stable performance during power conversion.
3. **Motor drive:** The FBE30S-VB is suitable for high-voltage motor drive systems. It can withstand high voltages and maintain good conductivity, which helps control the start, run and stop of the motor. It can handle the switching tasks in high-voltage motor drives to ensure the stability and reliability of the system.
4. **Battery management system:** In high-voltage battery management systems, the FBE30S-VB MOSFET can be used to protect batteries from overvoltage and overcurrent. It can effectively handle the switching needs of high-voltage batteries while ensuring safety and long life.
5. **Power factor correction (PFC):** In power factor correction circuits, the high voltage carrying capacity and low on-resistance of the FBE30S-VB make it suitable for high-voltage PFC applications. It can perform efficient power regulation and conversion in high-voltage power supplies, improving the power factor and efficiency of the system.
In short, FBE30S-VB MOSFET is suitable for various high-voltage and high-power electronic applications due to its high withstand voltage, low on-resistance and good conductivity, providing reliable performance for power electronic systems.
The high withstand voltage and good conductivity of FBE30S-VB MOSFET make it suitable for a variety of high voltage and high power application scenarios. Here are some application examples of specific fields and modules:
1. **High-voltage switching power supply (SMPS):** FBE30S-VB can be used as a switching element in a high-voltage switching power supply. Its high withstand voltage capability (800V) allows it to operate reliably in a high voltage environment, while its low on-resistance (850mΩ) reduces power loss and improves overall efficiency.
2. **Power converter:** In high-voltage power converters, such as AC-DC converters or DC-AC inverters, FBE30S-VB MOSFET is able to effectively handle large voltage changes and high power loads. Its high VDS and high withstand voltage enable it to provide stable performance during power conversion.
3. **Motor drive:** The FBE30S-VB is suitable for high-voltage motor drive systems. It can withstand high voltages and maintain good conductivity, which helps control the start, run and stop of the motor. It can handle the switching tasks in high-voltage motor drives to ensure the stability and reliability of the system.
4. **Battery management system:** In high-voltage battery management systems, the FBE30S-VB MOSFET can be used to protect batteries from overvoltage and overcurrent. It can effectively handle the switching needs of high-voltage batteries while ensuring safety and long life.
5. **Power factor correction (PFC):** In power factor correction circuits, the high voltage carrying capacity and low on-resistance of the FBE30S-VB make it suitable for high-voltage PFC applications. It can perform efficient power regulation and conversion in high-voltage power supplies, improving the power factor and efficiency of the system.
In short, FBE30S-VB MOSFET is suitable for various high-voltage and high-power electronic applications due to its high withstand voltage, low on-resistance and good conductivity, providing reliable performance for power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
