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FBE20S-VB Product details
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FBE20S-VB MOSFET Product Introduction
FBE20S-VB is a high voltage, single N-channel MOSFET in a TO263 package using SJ_Multi-EPI technology. The device is designed to withstand drain-source voltages (VDS) up to 800V and is suitable for high voltage applications. It has an on-resistance (RDS(ON)) of 850mΩ and can handle a maximum drain current of 7A. Its threshold voltage (Vth) is 3.5V, ensuring reliable conduction at relatively low gate voltages. FBE20S-VB is particularly suitable for high voltage and high current applications, requiring higher voltage resistance and efficiency.
FBE20S-VB is a high voltage, single N-channel MOSFET in a TO263 package using SJ_Multi-EPI technology. The device is designed to withstand drain-source voltages (VDS) up to 800V and is suitable for high voltage applications. It has an on-resistance (RDS(ON)) of 850mΩ and can handle a maximum drain current of 7A. Its threshold voltage (Vth) is 3.5V, ensuring reliable conduction at relatively low gate voltages. FBE20S-VB is particularly suitable for high voltage and high current applications, requiring higher voltage resistance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Package type**: TO263, suitable for surface mounting, with good heat dissipation performance, suitable for medium and high power applications.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and current control applications, providing excellent switching characteristics and current carrying capacity.
3. **Drain-source voltage (VDS)**: 800V
- **Maximum drain-source voltage**: Supports drain-source voltage up to 800V, suitable for high voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand gate voltage of ±30V, providing flexible gate drive options.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: The threshold voltage is 3.5V, ensuring effective conduction at a relatively low gate voltage, suitable for low voltage driving conditions.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **On-resistance**: When the gate voltage is 10V, the on-resistance is 850mΩ, ensuring low power consumption and high efficiency.
7. **Maximum drain current (ID)**: 7A
- **Maximum continuous current**: Able to withstand a maximum drain current of 7A, suitable for medium power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology type**: Adopts SJ_Multi-EPI technology, which optimizes voltage tolerance and on-resistance, providing high efficiency and stability.
1. **Package**: TO263
- **Package type**: TO263, suitable for surface mounting, with good heat dissipation performance, suitable for medium and high power applications.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and current control applications, providing excellent switching characteristics and current carrying capacity.
3. **Drain-source voltage (VDS)**: 800V
- **Maximum drain-source voltage**: Supports drain-source voltage up to 800V, suitable for high voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand gate voltage of ±30V, providing flexible gate drive options.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: The threshold voltage is 3.5V, ensuring effective conduction at a relatively low gate voltage, suitable for low voltage driving conditions.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **On-resistance**: When the gate voltage is 10V, the on-resistance is 850mΩ, ensuring low power consumption and high efficiency.
7. **Maximum drain current (ID)**: 7A
- **Maximum continuous current**: Able to withstand a maximum drain current of 7A, suitable for medium power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology type**: Adopts SJ_Multi-EPI technology, which optimizes voltage tolerance and on-resistance, providing high efficiency and stability.
Domain and module applications：
Application fields and module examples
The high voltage handling capability and moderate on-resistance of FBE20S-VB make it suitable for multiple fields and modules:
1. **High voltage power management**
In high voltage power management systems, FBE20S-VB is suitable for high voltage DC-DC converters and power switches. Its high voltage handling capability can effectively handle the switching control of high voltage power supplies, providing high efficiency and stability.
2. **Power inverter**
In power inverter applications, FBE20S-VB can be used for current switching and power regulation. Its high drain-source voltage and low on-resistance enable it to operate stably in the output stage of high power inverters, improving the efficiency and reliability of the system.
3. **Industrial motor control**
This MOSFET is used for driving and controlling high voltage motors in industrial motor control applications. Its high voltage handling capability and excellent on-characteristics enable it to meet the needs of high voltage motors, ensuring stable and efficient operation of the system.
4. **High-voltage battery management system**
In high-voltage battery management systems, FBE20S-VB can be used for battery switching and power regulation. Its high voltage capability and low on-resistance improve the performance and safety of battery management, and is suitable for high-voltage battery charge and discharge control.
5. **Lighting and power conversion applications**
In high-voltage lighting and power conversion applications, FBE20S-VB can be used for light regulation and power conversion. Its high voltage capability ensures stable operation under high voltage conditions, and its low on-resistance improves system efficiency and performance.
The high voltage tolerance and excellent switching performance of FBE20S-VB MOSFET make it excel in high voltage and high power applications, and can meet the needs of various high-performance circuit designs.
The high voltage handling capability and moderate on-resistance of FBE20S-VB make it suitable for multiple fields and modules:
1. **High voltage power management**
In high voltage power management systems, FBE20S-VB is suitable for high voltage DC-DC converters and power switches. Its high voltage handling capability can effectively handle the switching control of high voltage power supplies, providing high efficiency and stability.
2. **Power inverter**
In power inverter applications, FBE20S-VB can be used for current switching and power regulation. Its high drain-source voltage and low on-resistance enable it to operate stably in the output stage of high power inverters, improving the efficiency and reliability of the system.
3. **Industrial motor control**
This MOSFET is used for driving and controlling high voltage motors in industrial motor control applications. Its high voltage handling capability and excellent on-characteristics enable it to meet the needs of high voltage motors, ensuring stable and efficient operation of the system.
4. **High-voltage battery management system**
In high-voltage battery management systems, FBE20S-VB can be used for battery switching and power regulation. Its high voltage capability and low on-resistance improve the performance and safety of battery management, and is suitable for high-voltage battery charge and discharge control.
5. **Lighting and power conversion applications**
In high-voltage lighting and power conversion applications, FBE20S-VB can be used for light regulation and power conversion. Its high voltage capability ensures stable operation under high voltage conditions, and its low on-resistance improves system efficiency and performance.
The high voltage tolerance and excellent switching performance of FBE20S-VB MOSFET make it excel in high voltage and high power applications, and can meet the needs of various high-performance circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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