Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
|
1mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- **Package**: TO220, provides excellent heat dissipation performance and mechanical strength, suitable for high-power applications and environments requiring good heat dissipation.
2. **Configuration**: Single-channel N-Channel
- **Configuration**: Single-channel N-Channel MOSFET, suitable for high-current switching and current control applications.
3. **VDS (Drain to Source Voltage)**: 40V
- **Maximum Voltage**: 40V, suitable for low to medium voltage applications, capable of handling 40V voltage loads.
4. **VGS (Gate to Source Voltage)**: ±20V
- **Maximum Voltage**: ±20V, supports flexible gate drive voltage, providing greater design flexibility.
5. **Vth (Threshold Voltage)**: 2.5V
- **Threshold Voltage**: 2.5V, the voltage point at which the MOSFET starts to conduct, providing stable control for circuit design.
6. **RDS(ON) (On-Resistance)**:
- **When VGS=10V**: 1mΩ
- **On-Resistance**: 1mΩ at 10V gate voltage, low on-resistance reduces power loss and improves system efficiency.
7. **ID (Continuous Drain Current)**: 280A
- **Maximum Current**: 280A, supports high current loads, suitable for high power applications.
8. **Technology**: Trench
- **Technology Type**: Trench technology, which provides extremely low on-resistance and excellent switching performance, improving efficiency and performance.
Domain and module applications：
Application Examples
The characteristics of FB7434G-VB MOSFET enable it to excel in multiple fields and modules. Here are several typical application scenarios:
1. **Power Management**:
- In power management systems, the high current capability and low on-resistance of FB7434G-VB make it an ideal choice for efficient switching. For example, in high-power DC-DC converters, it can be used as a main switch to handle high currents and reduce power losses, thereby improving overall efficiency and stability.
2. **Electric Vehicle (EV) System**:
- In electric vehicles, FB7434G-VB can be used as a switching element in battery management and motor drive systems. Its high current handling capability and low on-resistance help improve battery charging and discharging efficiency, improve the driving performance of motors, and ensure efficient operation and long battery life of electric vehicles.
3. **High Power Inverter**:
- Used in high power inverters, the FB7434G-VB provides stable switching performance and high current support. It is suitable for applications such as solar inverters and wind inverters to help efficiently convert and control high power AC currents, improving the efficiency and reliability of the inverter.
4. **Industrial Motor Drive**:
- In industrial motor drive systems, the high current capability of the FB7434G-VB makes it suitable for motor control and drive modules. Its low on-resistance and high power handling capabilities can effectively control the start, operation and speed regulation of the motor, and is suitable for various industrial automation and control systems.
5. **Current Protection Circuit**:
- In current protection circuits, the FB7434G-VB can be used as a protection switch to prevent overcurrent conditions from damaging the circuit. Its high current carrying capacity and low on-resistance ensure the reliability and effectiveness of the current protection function, and is suitable for high power electronic devices and protection circuits.
The design and performance of the FB7434G-VB MOSFET make it an ideal switching solution in high current, high efficiency electronic devices, suitable for a variety of applications requiring high power and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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