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F9Z34S-VB Product details
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F9Z34S-VB MOSFET Product Introduction
F9Z34S-VB is a high-performance single-channel P-Channel MOSFET in TO263 package. Its maximum drain-to-source voltage (VDS) is -60V and its maximum gate-to-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V and it uses Trench technology to have excellent on-resistance characteristics. At VGS of 4.5V, its on-resistance (RDS(ON)) is 77mΩ and at VGS of 10V it is 64mΩ. The F9Z34S-VB can handle a maximum continuous drain current of -30A, making it ideal for switching applications with high current loads.
F9Z34S-VB is a high-performance single-channel P-Channel MOSFET in TO263 package. Its maximum drain-to-source voltage (VDS) is -60V and its maximum gate-to-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V and it uses Trench technology to have excellent on-resistance characteristics. At VGS of 4.5V, its on-resistance (RDS(ON)) is 77mΩ and at VGS of 10V it is 64mΩ. The F9Z34S-VB can handle a maximum continuous drain current of -30A, making it ideal for switching applications with high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- TO263 package provides good heat dissipation and reliable mechanical support, suitable for medium to high power applications.
2. **Configuration**: Single-channel P-Channel
- Single-channel P-Channel configuration is suitable for negative voltage switching and reverse current control.
3. **VDS (Drain to Source Voltage)**: -60V
- The maximum allowed negative voltage is -60V, suitable for switching applications with high voltage loads.
4. **VGS (Gate to Source Voltage)**: ±20V
- The maximum gate to source voltage range is ±20V, ensuring stability under various driving conditions.
5. **Vth（Threshold Voltage）**: -1.7V
- Minimum gate-to-source voltage at which the MOSFET starts to conduct, suitable for low voltage control applications.
6. **RDS(ON)（On-resistance）**:
- 77mΩ at VGS=4.5V
- 64mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.
7. **ID（Continuous Drain Current）**: -30A
- Maximum continuous drain current that the MOSFET can handle, suitable for switching requirements of high current loads.
8. **Technology**: Trench
- Adopting Trench technology helps reduce on-resistance, improve switching efficiency and current handling capability.
1. **Package**: TO263
- TO263 package provides good heat dissipation and reliable mechanical support, suitable for medium to high power applications.
2. **Configuration**: Single-channel P-Channel
- Single-channel P-Channel configuration is suitable for negative voltage switching and reverse current control.
3. **VDS (Drain to Source Voltage)**: -60V
- The maximum allowed negative voltage is -60V, suitable for switching applications with high voltage loads.
4. **VGS (Gate to Source Voltage)**: ±20V
- The maximum gate to source voltage range is ±20V, ensuring stability under various driving conditions.
5. **Vth（Threshold Voltage）**: -1.7V
- Minimum gate-to-source voltage at which the MOSFET starts to conduct, suitable for low voltage control applications.
6. **RDS(ON)（On-resistance）**:
- 77mΩ at VGS=4.5V
- 64mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.
7. **ID（Continuous Drain Current）**: -30A
- Maximum continuous drain current that the MOSFET can handle, suitable for switching requirements of high current loads.
8. **Technology**: Trench
- Adopting Trench technology helps reduce on-resistance, improve switching efficiency and current handling capability.
Domain and module applications：
Application Examples
The high current handling capability and low on-resistance of the F9Z34S-VB MOSFET make it suitable for a variety of fields and modules. Here are a few typical application examples:
1. **Power Management**:
- In power management systems, the F9Z34S-VB can be used as a power switch and load management. Its low on-resistance and high current handling capability make it ideal for use in DC-DC converters and power switch modules, ensuring high efficiency and reliability.
2. **Power Tools**:
- Suitable for switch control and current regulation in power tools. The high current handling capability and low on-resistance of the F9Z34S-VB enable it to provide stable performance and efficient current management in the drive circuit of power tools.
3. **Power Amplifier**:
- Used for switching and regulation of power amplifiers. The F9Z34S-VB is capable of handling high power signals and is suitable for switch control in power amplifiers to improve system efficiency and performance.
4. **Load Switch**:
- Suitable for switching control of various high-power loads, such as motor drives and electric heating equipment. F9Z34S-VB can provide stable switching performance to ensure the reliability of loads under different working conditions.
In short, F9Z34S-VB MOSFET is suitable for power management, power tools, power amplifiers and load switches with its excellent current handling capability and low on-resistance, significantly improving the performance and efficiency of the system.
The high current handling capability and low on-resistance of the F9Z34S-VB MOSFET make it suitable for a variety of fields and modules. Here are a few typical application examples:
1. **Power Management**:
- In power management systems, the F9Z34S-VB can be used as a power switch and load management. Its low on-resistance and high current handling capability make it ideal for use in DC-DC converters and power switch modules, ensuring high efficiency and reliability.
2. **Power Tools**:
- Suitable for switch control and current regulation in power tools. The high current handling capability and low on-resistance of the F9Z34S-VB enable it to provide stable performance and efficient current management in the drive circuit of power tools.
3. **Power Amplifier**:
- Used for switching and regulation of power amplifiers. The F9Z34S-VB is capable of handling high power signals and is suitable for switch control in power amplifiers to improve system efficiency and performance.
4. **Load Switch**:
- Suitable for switching control of various high-power loads, such as motor drives and electric heating equipment. F9Z34S-VB can provide stable switching performance to ensure the reliability of loads under different working conditions.
In short, F9Z34S-VB MOSFET is suitable for power management, power tools, power amplifiers and load switches with its excellent current handling capability and low on-resistance, significantly improving the performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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