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F9Z24S-VB Product details
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F9Z24S-VB MOSFET Product Introduction
The F9Z24S-VB is a P-channel MOSFET in a TO263 package, designed for negative voltage applications. It has a maximum drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, suitable for switching and regulation functions under high current loads. The threshold voltage (Vth) of this MOSFET is -1.7V, which supports low voltage startup. The F9Z24S-VB uses Trench technology to provide lower on-resistance (RDS(ON)) and continuous current capability of up to -30A, suitable for high current switching applications in negative voltage environments.
The F9Z24S-VB is a P-channel MOSFET in a TO263 package, designed for negative voltage applications. It has a maximum drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, suitable for switching and regulation functions under high current loads. The threshold voltage (Vth) of this MOSFET is -1.7V, which supports low voltage startup. The F9Z24S-VB uses Trench technology to provide lower on-resistance (RDS(ON)) and continuous current capability of up to -30A, suitable for high current switching applications in negative voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- TO263 package provides good heat dissipation performance, suitable for high power applications and designs with high board-level heat dissipation requirements, especially in limited space. It can effectively handle large power.
2. **Configuration**: Single P-channel
- Consists of a P-channel MOSFET, suitable for negative voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: -60V
- The maximum negative voltage between the drain and the source that can be tolerated, suitable for switching and controlling high current negative voltage loads.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold Voltage (Vth)**: -1.7V
- Minimum gate-source voltage required to start the MOSFET, suitable for low voltage driving conditions, ensuring efficient switching at lower gate voltages.
6. **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- Resistance between drain and source in the on state, lower RDS(ON) provides lower power consumption and higher switching efficiency.
7. **Continuous Drain Current (ID)**: -30A
- Maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for high current and negative voltage applications.
1. **Package**: TO263
- TO263 package provides good heat dissipation performance, suitable for high power applications and designs with high board-level heat dissipation requirements, especially in limited space. It can effectively handle large power.
2. **Configuration**: Single P-channel
- Consists of a P-channel MOSFET, suitable for negative voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: -60V
- The maximum negative voltage between the drain and the source that can be tolerated, suitable for switching and controlling high current negative voltage loads.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold Voltage (Vth)**: -1.7V
- Minimum gate-source voltage required to start the MOSFET, suitable for low voltage driving conditions, ensuring efficient switching at lower gate voltages.
6. **On-resistance (RDS(ON))**:
- 77mΩ @ VGS=4.5V
- 64mΩ @ VGS=10V
- Resistance between drain and source in the on state, lower RDS(ON) provides lower power consumption and higher switching efficiency.
7. **Continuous Drain Current (ID)**: -30A
- Maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for high current and negative voltage applications.
Domain and module applications：
Application Examples
The characteristics of the F9Z24S-VB MOSFET make it suitable for the following fields:
1. **Negative voltage load switching**: The -60V drain-source voltage of the F9Z24S-VB is suitable for switching applications of negative voltage loads, such as negative voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under negative voltage conditions.
2. **Power management**: In negative voltage power management systems, such as negative voltage battery management and power converters, the F9Z24S-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **Negative voltage inverter**: This MOSFET is suitable for negative voltage inverter circuits, which are used to convert DC power to negative voltage AC power, adapt to various negative voltage conversion requirements, and provide stable switching and control functions.
4. **High current load control**: Due to its high current handling capability and low on-resistance, the F9Z24S-VB is suitable for high current load control applications, such as high power load switching and motor control systems, ensuring high efficiency and stability of the system.
5. **Negative voltage motor drive**: The F9Z24S-VB is also suitable for motor drive applications that require negative voltage and high current, such as negative voltage DC motor drive systems, providing efficient switching and current regulation functions, suitable for negative voltage motor control.
The characteristics of the F9Z24S-VB MOSFET make it suitable for the following fields:
1. **Negative voltage load switching**: The -60V drain-source voltage of the F9Z24S-VB is suitable for switching applications of negative voltage loads, such as negative voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under negative voltage conditions.
2. **Power management**: In negative voltage power management systems, such as negative voltage battery management and power converters, the F9Z24S-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **Negative voltage inverter**: This MOSFET is suitable for negative voltage inverter circuits, which are used to convert DC power to negative voltage AC power, adapt to various negative voltage conversion requirements, and provide stable switching and control functions.
4. **High current load control**: Due to its high current handling capability and low on-resistance, the F9Z24S-VB is suitable for high current load control applications, such as high power load switching and motor control systems, ensuring high efficiency and stability of the system.
5. **Negative voltage motor drive**: The F9Z24S-VB is also suitable for motor drive applications that require negative voltage and high current, such as negative voltage DC motor drive systems, providing efficient switching and current regulation functions, suitable for negative voltage motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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