中文
English
F9NM50N-VB Product details
Back to previous pageProduct introduction：
F9NM50N-VB MOSFET Product Introduction
The F9NM50N-VB is a high voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in a TO220F and manufactured based on planar technology. With a drain-source voltage capability of 550V and a maximum drain current of 18A, this MOSFET is suitable for reliable switching operations in high voltage environments. Its on-resistance is 260mΩ at a VGS of 10V, allowing the F9NM50N-VB to effectively manage high voltage loads, provide stable performance and relatively low power consumption, and is very suitable for power switching and high voltage power management applications.
The F9NM50N-VB is a high voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in a TO220F and manufactured based on planar technology. With a drain-source voltage capability of 550V and a maximum drain current of 18A, this MOSFET is suitable for reliable switching operations in high voltage environments. Its on-resistance is 260mΩ at a VGS of 10V, allowing the F9NM50N-VB to effectively manage high voltage loads, provide stable performance and relatively low power consumption, and is very suitable for power switching and high voltage power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F9NM50N-VB MOSFET Detailed parameter description
- **Model**: F9NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Model**: F9NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
F9NM50N-VB MOSFET Applications and Modules
The high voltage and high current handling capabilities of the F9NM50N-VB MOSFET make it suitable for the following areas and modules:
1. **High Voltage Power Management**: The F9NM50N-VB is suitable for high voltage power management systems, such as high voltage DC-DC converters and AC-DC adapters. Its 550V drain-source voltage capability enables it to reliably switch power in high voltage environments, ensuring system stability and high efficiency.
2. **Power Switching**: In high power switching applications, such as power regulators and high voltage load switches, the F9NM50N-VB provides reliable switching performance. Its low on-resistance and high current capability make it suitable for the switching needs of various high power loads.
3. **Inverters and Power Conditioners**: In inverters and power conditioners, such as solar inverters and power conditioning modules, the F9NM50N-VB can effectively manage high voltage and high power loads, improving the efficiency and reliability of the system.
4. **Motor Drive**: Suitable for high voltage motor drive systems, such as industrial motors and power tool drives. The F9NM50N-VB can handle the high voltage and high current loads of the motor, providing stable motor control performance.
5. **Load Switch**: In load switching applications, such as high voltage load switching and current control, the F9NM50N-VB can provide stable switching functions, handle high current loads, reduce power consumption and heat, and is suitable for load control in high voltage environments.
With its high voltage and high current handling capabilities, the F9NM50N-VB MOSFET provides an efficient and reliable solution for high voltage power management, power switching, inverter and load switching applications.
The high voltage and high current handling capabilities of the F9NM50N-VB MOSFET make it suitable for the following areas and modules:
1. **High Voltage Power Management**: The F9NM50N-VB is suitable for high voltage power management systems, such as high voltage DC-DC converters and AC-DC adapters. Its 550V drain-source voltage capability enables it to reliably switch power in high voltage environments, ensuring system stability and high efficiency.
2. **Power Switching**: In high power switching applications, such as power regulators and high voltage load switches, the F9NM50N-VB provides reliable switching performance. Its low on-resistance and high current capability make it suitable for the switching needs of various high power loads.
3. **Inverters and Power Conditioners**: In inverters and power conditioners, such as solar inverters and power conditioning modules, the F9NM50N-VB can effectively manage high voltage and high power loads, improving the efficiency and reliability of the system.
4. **Motor Drive**: Suitable for high voltage motor drive systems, such as industrial motors and power tool drives. The F9NM50N-VB can handle the high voltage and high current loads of the motor, providing stable motor control performance.
5. **Load Switch**: In load switching applications, such as high voltage load switching and current control, the F9NM50N-VB can provide stable switching functions, handle high current loads, reduce power consumption and heat, and is suitable for load control in high voltage environments.
With its high voltage and high current handling capabilities, the F9NM50N-VB MOSFET provides an efficient and reliable solution for high voltage power management, power switching, inverter and load switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
