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F9NK80Z-VB Product details
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F9NK80Z-VB MOSFET Product Introduction
F9NK80Z-VB is an N-channel MOSFET in TO220F package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, suitable for switching and regulation functions in high voltage environments. The threshold voltage (Vth) of this MOSFET is 3.5V, which supports higher gate voltage control. F9NK80Z-VB adopts SJ_Multi-EPI technology, has higher withstand voltage and lower on-resistance (RDS(ON)), can withstand up to 7A of continuous current, and is suitable for high voltage and high power switching applications.
F9NK80Z-VB is an N-channel MOSFET in TO220F package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, suitable for switching and regulation functions in high voltage environments. The threshold voltage (Vth) of this MOSFET is 3.5V, which supports higher gate voltage control. F9NK80Z-VB adopts SJ_Multi-EPI technology, has higher withstand voltage and lower on-resistance (RDS(ON)), can withstand up to 7A of continuous current, and is suitable for high voltage and high power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- TO220F package provides good heat dissipation performance and large power handling capability, suitable for high power applications and designs requiring good heat dissipation.
2. **Configuration**: Single N-channel
- Consists of an N-channel MOSFET, suitable for positive voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: 800V
- The maximum drain-source voltage that can be tolerated, suitable for switching and controlling high voltage loads.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate-source voltage required to start the MOSFET, supporting higher gate voltage drive.
6. **On-resistance (RDS(ON))**:
- 770mΩ @ VGS=10V
- The resistance between the drain and the source in the on state. Lower RDS(ON) improves switching efficiency and reduces power consumption.
7. **Continuous drain current (ID)**: 7A
- The maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high withstand voltage and low on-resistance characteristics, suitable for high voltage and high power applications.
1. **Package**: TO220F
- TO220F package provides good heat dissipation performance and large power handling capability, suitable for high power applications and designs requiring good heat dissipation.
2. **Configuration**: Single N-channel
- Consists of an N-channel MOSFET, suitable for positive voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: 800V
- The maximum drain-source voltage that can be tolerated, suitable for switching and controlling high voltage loads.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate-source voltage required to start the MOSFET, supporting higher gate voltage drive.
6. **On-resistance (RDS(ON))**:
- 770mΩ @ VGS=10V
- The resistance between the drain and the source in the on state. Lower RDS(ON) improves switching efficiency and reduces power consumption.
7. **Continuous drain current (ID)**: 7A
- The maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high withstand voltage and low on-resistance characteristics, suitable for high voltage and high power applications.
Domain and module applications：
Application Examples
The high voltage handling capability and low on-resistance of the F9NK80Z-VB MOSFET make it widely used in the following fields:
1. **High Voltage Load Switch**: The 800V drain-source voltage of the F9NK80Z-VB makes it suitable for switching applications of high voltage loads, such as high voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under high voltage conditions.
2. **Power Management**: In high voltage power management systems, such as high voltage battery management and power converters, the F9NK80Z-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **High Voltage Inverter**: This MOSFET is suitable for high voltage inverter circuits to convert DC power to AC power, adapting to various high voltage conversion requirements and providing stable switching and control functions.
4. **High-power motor drive**: F9NK80Z-VB is also suitable for motor drive applications that require high voltage and high current, such as high-power stepper motor and DC motor drive systems, providing efficient switching and current regulation functions, suitable for high-power motor control.
5. **High-voltage load control**: Due to its high voltage handling capability and low on-resistance, F9NK80Z-VB is also suitable for high-power load control applications, such as high-power load switching and motor control systems, ensuring high efficiency and stability of the system.
The high voltage handling capability and low on-resistance of the F9NK80Z-VB MOSFET make it widely used in the following fields:
1. **High Voltage Load Switch**: The 800V drain-source voltage of the F9NK80Z-VB makes it suitable for switching applications of high voltage loads, such as high voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under high voltage conditions.
2. **Power Management**: In high voltage power management systems, such as high voltage battery management and power converters, the F9NK80Z-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **High Voltage Inverter**: This MOSFET is suitable for high voltage inverter circuits to convert DC power to AC power, adapting to various high voltage conversion requirements and providing stable switching and control functions.
4. **High-power motor drive**: F9NK80Z-VB is also suitable for motor drive applications that require high voltage and high current, such as high-power stepper motor and DC motor drive systems, providing efficient switching and current regulation functions, suitable for high-power motor control.
5. **High-voltage load control**: Due to its high voltage handling capability and low on-resistance, F9NK80Z-VB is also suitable for high-power load control applications, such as high-power load switching and motor control systems, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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