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F9620S-VB Product details
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F9620S-VB MOSFET Product Introduction
The F9620S-VB is a high-voltage single P-channel MOSFET in a TO263 package, designed for high voltage and high current applications. This MOSFET has a maximum drain-to-source voltage (VDS) of -200V and a gate-to-source voltage (VGS) tolerance of ±20V, suitable for negative voltage drive. Its threshold voltage (Vth) is -3.5V, enabling startup at a lower gate voltage. The F9620S-VB uses Trench technology and has a low on-resistance (RDS(ON)), which is 600mΩ at VGS of 4.5V and 500mΩ at VGS of 10V, and can handle a continuous drain current of up to -11A. This MOSFET is particularly suitable for high-voltage load switching and high-voltage power management applications, providing excellent performance and reliability.
The F9620S-VB is a high-voltage single P-channel MOSFET in a TO263 package, designed for high voltage and high current applications. This MOSFET has a maximum drain-to-source voltage (VDS) of -200V and a gate-to-source voltage (VGS) tolerance of ±20V, suitable for negative voltage drive. Its threshold voltage (Vth) is -3.5V, enabling startup at a lower gate voltage. The F9620S-VB uses Trench technology and has a low on-resistance (RDS(ON)), which is 600mΩ at VGS of 4.5V and 500mΩ at VGS of 10V, and can handle a continuous drain current of up to -11A. This MOSFET is particularly suitable for high-voltage load switching and high-voltage power management applications, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | 500mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -3.5V | -11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- Uses TO263 package, suitable for high power applications, provides good heat dissipation performance, and can effectively manage higher power and heat.
2. **Configuration**: Single P-channel
- Provides a P-channel MOSFET, suitable for negative current control and load switching applications.
3. **VDS (Drain to Source Voltage)**: -200V
- The maximum voltage between the drain and the source, suitable for high voltage application scenarios.
4. **VGS (Gate to Source Voltage)**: ±20V
- The maximum voltage between the gate and the source, ensuring the stability of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: -3.5V
- The minimum gate to source voltage required to start the MOSFET, suitable for negative voltage drive circuits.
6. **RDS(ON)**:
- 600mΩ at VGS=4.5V
- 500mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.
7. **ID(Continuous Drain Current)**: -11A
- The maximum continuous current of the MOSFET at a specific VGS, suitable for handling medium current loads.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high current handling capability, ensuring efficient switching performance.
1. **Package**: TO263
- Uses TO263 package, suitable for high power applications, provides good heat dissipation performance, and can effectively manage higher power and heat.
2. **Configuration**: Single P-channel
- Provides a P-channel MOSFET, suitable for negative current control and load switching applications.
3. **VDS (Drain to Source Voltage)**: -200V
- The maximum voltage between the drain and the source, suitable for high voltage application scenarios.
4. **VGS (Gate to Source Voltage)**: ±20V
- The maximum voltage between the gate and the source, ensuring the stability of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: -3.5V
- The minimum gate to source voltage required to start the MOSFET, suitable for negative voltage drive circuits.
6. **RDS(ON)**:
- 600mΩ at VGS=4.5V
- 500mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.
7. **ID(Continuous Drain Current)**: -11A
- The maximum continuous current of the MOSFET at a specific VGS, suitable for handling medium current loads.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high current handling capability, ensuring efficient switching performance.
Domain and module applications：
Application Examples
The high voltage withstand capability and low on-resistance characteristics of the F9620S-VB MOSFET make it widely used in many fields and modules. Here are some specific application examples:
1. **High Voltage Power Management**:
- The F9620S-VB is ideal for high voltage power management systems such as high voltage DC-DC converters and voltage regulators. Its high voltage withstand capability of 200V enables stable operation in high voltage environments, suitable for industrial power supplies, high voltage battery management systems and high voltage power modules.
2. **High Voltage Load Switch**:
- In high voltage load switch applications, the F9620S-VB is able to efficiently control negative currents, suitable for power switching and load switch modules. Its high voltage withstand capability and low on-resistance make it suitable for load control of switching power supplies and switching of medium current loads.
3. **High-voltage Motor Driver**:
- In motor driver applications, the F9620S-VB is capable of handling high voltage and medium current, making it suitable for high-voltage motor control systems. Its high voltage capability and low power loss make it ideal for power switching and control in high-voltage motor drive systems.
4. **Switching Power Supply**:
- The F9620S-VB excels in switching power supply design and is suitable for high-voltage switching power supplies and power converters. Its low on-resistance and high voltage withstand capability ensure high efficiency and reliability, especially in switching power supplies that require high voltage and medium current.
In summary, the F9620S-VB MOSFET is suitable for use in applications such as high-voltage power management, high-voltage load switching, high-voltage motor drivers, and switching power supplies with its high voltage withstand capability and low on-resistance, which can significantly improve system performance and reliability.
The high voltage withstand capability and low on-resistance characteristics of the F9620S-VB MOSFET make it widely used in many fields and modules. Here are some specific application examples:
1. **High Voltage Power Management**:
- The F9620S-VB is ideal for high voltage power management systems such as high voltage DC-DC converters and voltage regulators. Its high voltage withstand capability of 200V enables stable operation in high voltage environments, suitable for industrial power supplies, high voltage battery management systems and high voltage power modules.
2. **High Voltage Load Switch**:
- In high voltage load switch applications, the F9620S-VB is able to efficiently control negative currents, suitable for power switching and load switch modules. Its high voltage withstand capability and low on-resistance make it suitable for load control of switching power supplies and switching of medium current loads.
3. **High-voltage Motor Driver**:
- In motor driver applications, the F9620S-VB is capable of handling high voltage and medium current, making it suitable for high-voltage motor control systems. Its high voltage capability and low power loss make it ideal for power switching and control in high-voltage motor drive systems.
4. **Switching Power Supply**:
- The F9620S-VB excels in switching power supply design and is suitable for high-voltage switching power supplies and power converters. Its low on-resistance and high voltage withstand capability ensure high efficiency and reliability, especially in switching power supplies that require high voltage and medium current.
In summary, the F9620S-VB MOSFET is suitable for use in applications such as high-voltage power management, high-voltage load switching, high-voltage motor drivers, and switching power supplies with its high voltage withstand capability and low on-resistance, which can significantly improve system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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