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F9540NS-VB Product details
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F9540NS-VB MOSFET Product Introduction
F9540NS-VB is a P-channel MOSFET in TO263 package, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and can withstand high negative voltages. The threshold voltage (Vth) of this MOSFET is -2V, which supports low voltage drive. F9540NS-VB uses Trench technology, has a low on-resistance (RDS(ON)) and a continuous current capability of up to -37A, suitable for high power switching and negative voltage regulation applications.
F9540NS-VB is a P-channel MOSFET in TO263 package, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, and can withstand high negative voltages. The threshold voltage (Vth) of this MOSFET is -2V, which supports low voltage drive. F9540NS-VB uses Trench technology, has a low on-resistance (RDS(ON)) and a continuous current capability of up to -37A, suitable for high power switching and negative voltage regulation applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- TO263 package provides good heat dissipation and large power handling capability, suitable for high power applications and compact board-level design.
2. **Configuration**: Single P-channel
- Consists of a P-channel MOSFET, suitable for negative voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: -100V
- The maximum negative voltage between the drain and source that can be tolerated, suitable for high voltage load applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: -2V
- The minimum gate-source voltage required to start the MOSFET, suitable for low voltage driving conditions, supporting negative voltage switching operation.
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- The resistance between the drain and the source in the on state. The lower RDS(ON) enables lower power consumption and higher efficiency in high current applications.
7. **Continuous drain current (ID)**: -37A
- The maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for applications with high current and high efficiency requirements.
1. **Package**: TO263
- TO263 package provides good heat dissipation and large power handling capability, suitable for high power applications and compact board-level design.
2. **Configuration**: Single P-channel
- Consists of a P-channel MOSFET, suitable for negative voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: -100V
- The maximum negative voltage between the drain and source that can be tolerated, suitable for high voltage load applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: -2V
- The minimum gate-source voltage required to start the MOSFET, suitable for low voltage driving conditions, supporting negative voltage switching operation.
6. **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- The resistance between the drain and the source in the on state. The lower RDS(ON) enables lower power consumption and higher efficiency in high current applications.
7. **Continuous drain current (ID)**: -37A
- The maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for applications with high current and high efficiency requirements.
Domain and module applications：
Application Examples
F9540NS-VB MOSFET is widely used in the following fields due to its high voltage handling capability and low on-resistance:
1. **High Voltage Load Switching**: The -100V drain-source voltage of F9540NS-VB makes it suitable for switching applications of high voltage loads, such as high voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under high voltage conditions.
2. **Power Management**: In high voltage and high power power management systems, such as high voltage battery management and power converters, F9540NS-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **Motor Drive**: This MOSFET is suitable for motor drive applications that require negative voltage and high current, such as high power stepper motor and DC motor drive systems, providing efficient switching and current regulation functions, suitable for high power motor control.
4. **Inverter**: In high voltage inverter circuits, F9540NS-VB can be used as a negative voltage channel switch to convert DC power to AC power, adapting to various negative voltage conversion requirements.
5. **High power load control**: Due to its high current handling capability and low power consumption, F9540NS-VB is also suitable for high power load control applications, such as high power load switches and motor control systems, ensuring high efficiency and stability of the system.
F9540NS-VB MOSFET is widely used in the following fields due to its high voltage handling capability and low on-resistance:
1. **High Voltage Load Switching**: The -100V drain-source voltage of F9540NS-VB makes it suitable for switching applications of high voltage loads, such as high voltage power management and negative voltage control circuits. Its low on-resistance ensures efficient switching operation under high voltage conditions.
2. **Power Management**: In high voltage and high power power management systems, such as high voltage battery management and power converters, F9540NS-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **Motor Drive**: This MOSFET is suitable for motor drive applications that require negative voltage and high current, such as high power stepper motor and DC motor drive systems, providing efficient switching and current regulation functions, suitable for high power motor control.
4. **Inverter**: In high voltage inverter circuits, F9540NS-VB can be used as a negative voltage channel switch to convert DC power to AC power, adapting to various negative voltage conversion requirements.
5. **High power load control**: Due to its high current handling capability and low power consumption, F9540NS-VB is also suitable for high power load control applications, such as high power load switches and motor control systems, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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