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F8NM60N-VB Product details
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F8NM60N-VB MOSFET Product Introduction
The F8NM60N-VB is a high-voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for switching applications in high-voltage environments. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable switching at lower gate voltages. Manufactured using planar technology, the F8NM60N-VB has an on-resistance (RDS(ON)) of 680mΩ and a maximum drain current (ID) of 12A, making it suitable for use in high-voltage, high-power electronic devices. Its stable performance and high voltage resistance enable it to excel in applications requiring high voltage resistance.
The F8NM60N-VB is a high-voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for switching applications in high-voltage environments. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable switching at lower gate voltages. Manufactured using planar technology, the F8NM60N-VB has an on-resistance (RDS(ON)) of 680mΩ and a maximum drain current (ID) of 12A, making it suitable for use in high-voltage, high-power electronic devices. Its stable performance and high voltage resistance enable it to excel in applications requiring high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F8NM60N-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 680mΩ @ VGS=10V
- **Drain current (ID): ** 12A
- **Technology type (Technology): ** Planar
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 680mΩ @ VGS=10V
- **Drain current (ID): ** 12A
- **Technology type (Technology): ** Planar
Domain and module applications：
F8NM60N-VB MOSFET Applicable fields and application modules
F8NM60N-VB MOSFET is widely used in multiple fields and modules due to its high voltage tolerance and stable performance:
1. **High-voltage power management:** This MOSFET is very suitable for high-voltage power management systems such as AC-DC converters, switching power supplies (SMPS) and high-voltage DC-DC converters. Its 650V drain-source voltage can handle switching tasks in high-voltage environments, ensuring the reliability and efficiency of the power supply.
2. **Industrial power switch:** In industrial applications, F8NM60N-VB is suitable for switching control of high-voltage and high-power loads, such as motor drives, power conditioning modules, and power switches in industrial automation equipment. Its high voltage capability and stable performance ensure the safety and reliability of the system.
3. **Power factor correction (PFC):** This MOSFET can be used in power factor correction circuits. Its high withstand voltage and on-resistance characteristics enable it to switch effectively under high voltage conditions, optimize the power factor, and improve the overall efficiency of the system.
4. **High-voltage converters:** In high-voltage converter applications, the F8NM60N-VB can provide stable switching control and is suitable for high-voltage power supply conversion and voltage regulation circuits. Its high voltage tolerance ensures stable performance in high-voltage environments, improving the performance and reliability of the equipment.
With its high voltage tolerance and excellent performance, the F8NM60N-VB MOSFET is a reliable choice in various high-voltage applications, meeting the needs of high voltage and high power.
F8NM60N-VB MOSFET is widely used in multiple fields and modules due to its high voltage tolerance and stable performance:
1. **High-voltage power management:** This MOSFET is very suitable for high-voltage power management systems such as AC-DC converters, switching power supplies (SMPS) and high-voltage DC-DC converters. Its 650V drain-source voltage can handle switching tasks in high-voltage environments, ensuring the reliability and efficiency of the power supply.
2. **Industrial power switch:** In industrial applications, F8NM60N-VB is suitable for switching control of high-voltage and high-power loads, such as motor drives, power conditioning modules, and power switches in industrial automation equipment. Its high voltage capability and stable performance ensure the safety and reliability of the system.
3. **Power factor correction (PFC):** This MOSFET can be used in power factor correction circuits. Its high withstand voltage and on-resistance characteristics enable it to switch effectively under high voltage conditions, optimize the power factor, and improve the overall efficiency of the system.
4. **High-voltage converters:** In high-voltage converter applications, the F8NM60N-VB can provide stable switching control and is suitable for high-voltage power supply conversion and voltage regulation circuits. Its high voltage tolerance ensures stable performance in high-voltage environments, improving the performance and reliability of the equipment.
With its high voltage tolerance and excellent performance, the F8NM60N-VB MOSFET is a reliable choice in various high-voltage applications, meeting the needs of high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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