Product introduction：
F830-VB MOSFET Product Introduction
F830-VB is a high-voltage single N-channel MOSFET in TO220 package, designed for high voltage applications. Its maximum drain-to-source voltage (VDS) is 600V, and it can work stably in extremely high voltage environments. The gate-to-source voltage (VGS) tolerance of F830-VB is ±30V, and the threshold voltage (Vth) is 3.5V, which is suitable for medium and high voltage drive. Although it uses Plannar technology, the relatively high on-resistance (RDS(ON)) is 1070mΩ (VGS=4.5V) and 780mΩ (VGS=10V), but the maximum drain current (ID) it can withstand can reach 8A. This MOSFET is suitable for power management systems and power control modules that require high voltage tolerance and high reliability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
|
780mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- Suitable for high power applications, with good heat dissipation performance, easy to use in higher power environments.
2. **Configuration**: Single N-channel
- Provides an N-channel MOSFET, suitable for unidirectional current control applications.
3. **VDS (Drain to Source Voltage)**: 600V
- The maximum voltage between the drain and the source, suitable for high voltage application scenarios.
4. **VGS (Gate to Source Voltage)**: ±30V
- The maximum voltage between the gate and the source, ensuring the stability of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: 3.5V
- The minimum gate to source voltage required to start the MOSFET, suitable for medium and high voltage drive circuits.
6. **RDS(ON)**:
- 1070mΩ at VGS=4.5V
- 780mΩ at VGS=10V
- The relatively high on-resistance is suitable for applications with low power loss requirements.
7. **ID(Continuous Drain Current)**: 8A
- The maximum continuous current of the MOSFET at a specific VGS, suitable for applications with medium current loads.
8. **Technology**: Plannar
- Plannar technology is used, suitable for high voltage applications, but the on-resistance is slightly higher than Trench technology.
Domain and module applications：
Application Examples
The high voltage withstand capability and moderate current handling capability of the F830-VB MOSFET make it suitable for a variety of fields and modules. Here are some specific application examples:
1. **High Voltage Power Management**:
- The F830-VB is well suited for high voltage power management systems such as high voltage DC-DC converters and voltage regulators. Its high voltage withstand capability enables it to handle high voltage power supplies of 600V, making it suitable for industrial power supplies, high voltage battery management systems, and power conversion equipment.
2. **Inverters and Power Converters**:
- In inverters and power converters, the F830-VB is able to efficiently handle high voltage applications, making it suitable for power conversion in solar inverters, wind power generation systems, and other renewable energy applications.
3. **Motor Drives**:
- Despite the higher on-resistance of the F830-VB, its high voltage withstand capability still makes it suitable for medium and high voltage motor drive applications such as industrial motors and high voltage power tools.
4. **Switching Power Supply**:
- F830-VB can also play a role in switching power supply design, especially in applications that require high voltage and medium current, such as high-voltage switching power supplies and high-power converters.
In short, F830-VB MOSFET is suitable for use in high-voltage application scenarios with its high voltage tolerance and moderate current handling capability, especially in the fields of power management, power conversion and switching power supply, which can effectively improve the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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