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F822FI-VB Product details
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F822FI-VB MOSFET Product Introduction
F822FI-VB is an N-channel MOSFET in TO220F package, designed for high voltage applications. With a maximum drain-source voltage (VDS) of 650V, this MOSFET is capable of withstanding higher voltage loads. The gate-source voltage (VGS) is ±30V, providing flexible control options. The threshold voltage (Vth) is 3.5V, suitable for stable operation under high voltage drive conditions. The F822FI-VB uses Planar technology, providing reliable performance and moderate on-resistance (RDS(ON)), making it excellent in high voltage and medium power applications.
F822FI-VB is an N-channel MOSFET in TO220F package, designed for high voltage applications. With a maximum drain-source voltage (VDS) of 650V, this MOSFET is capable of withstanding higher voltage loads. The gate-source voltage (VGS) is ±30V, providing flexible control options. The threshold voltage (Vth) is 3.5V, suitable for stable operation under high voltage drive conditions. The F822FI-VB uses Planar technology, providing reliable performance and moderate on-resistance (RDS(ON)), making it excellent in high voltage and medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
- TO220F package has excellent heat dissipation performance and stable mechanical support, suitable for medium to high power applications.
2. **Configuration**: Single N-channel
- Consists of an N-channel transistor, suitable for switching and regulation applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum voltage between the drain and the source that can be tolerated, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltages.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate-source voltage required to start the MOSFET, suitable for high voltage drive requirements.
6. **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state. A higher RDS(ON) indicates that its resistance is relatively large when it is on.
7. **Continuous drain current (ID)**: 4A
- The maximum continuous current that the MOSFET can withstand under specified conditions, ensuring stability under medium load conditions.
8. **Technology**: Planar
- Planar technology provides higher voltage resistance and larger current handling capabilities, suitable for high voltage applications.
1. **Package**: TO220F
- TO220F package has excellent heat dissipation performance and stable mechanical support, suitable for medium to high power applications.
2. **Configuration**: Single N-channel
- Consists of an N-channel transistor, suitable for switching and regulation applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum voltage between the drain and the source that can be tolerated, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltages.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate-source voltage required to start the MOSFET, suitable for high voltage drive requirements.
6. **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state. A higher RDS(ON) indicates that its resistance is relatively large when it is on.
7. **Continuous drain current (ID)**: 4A
- The maximum continuous current that the MOSFET can withstand under specified conditions, ensuring stability under medium load conditions.
8. **Technology**: Planar
- Planar technology provides higher voltage resistance and larger current handling capabilities, suitable for high voltage applications.
Domain and module applications：
Application Examples
The high voltage handling capability and medium on-resistance of the F822FI-VB MOSFET make it suitable for the following fields:
1. **High Voltage Switching Power Supply**: Due to its high drain-source voltage of 650V, the F822FI-VB is very suitable for high voltage switching power supply applications such as AC-DC converters and DC-DC converters. This MOSFET can effectively handle and regulate high voltages, ensuring the stability and reliability of the power supply system.
2. **Motor Drive**: In motor drive applications that require medium current and high voltage, the F822FI-VB can stably control the working state of the motor, such as high voltage motor drives and servo motor control systems, providing stable current regulation functions.
3. **Industrial Power Management**: This MOSFET performs well in industrial power management systems, especially in high voltage and medium power applications such as industrial power conversion and distribution systems, capable of handling high voltage loads and providing stable performance.
4. **Home Appliances**: F822FI-VB is suitable for home appliances that require high voltage and medium power management, such as high-voltage induction cookers and electric heating systems. It is able to provide effective power control and switching functions in home appliances.
5. **Power Electronic Equipment**: Due to its good heat dissipation performance and high voltage handling capability, F822FI-VB is suitable for various power electronic equipment such as inverters and high-voltage chargers, which require MOSFETs to stably handle high voltage and medium current loads.
The high voltage handling capability and medium on-resistance of the F822FI-VB MOSFET make it suitable for the following fields:
1. **High Voltage Switching Power Supply**: Due to its high drain-source voltage of 650V, the F822FI-VB is very suitable for high voltage switching power supply applications such as AC-DC converters and DC-DC converters. This MOSFET can effectively handle and regulate high voltages, ensuring the stability and reliability of the power supply system.
2. **Motor Drive**: In motor drive applications that require medium current and high voltage, the F822FI-VB can stably control the working state of the motor, such as high voltage motor drives and servo motor control systems, providing stable current regulation functions.
3. **Industrial Power Management**: This MOSFET performs well in industrial power management systems, especially in high voltage and medium power applications such as industrial power conversion and distribution systems, capable of handling high voltage loads and providing stable performance.
4. **Home Appliances**: F822FI-VB is suitable for home appliances that require high voltage and medium power management, such as high-voltage induction cookers and electric heating systems. It is able to provide effective power control and switching functions in home appliances.
5. **Power Electronic Equipment**: Due to its good heat dissipation performance and high voltage handling capability, F822FI-VB is suitable for various power electronic equipment such as inverters and high-voltage chargers, which require MOSFETs to stably handle high voltage and medium current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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