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F7NM80-VB Product details
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Product Introduction - F7NM80-VB MOSFET
The F7NM80-VB is a high voltage, high withstand voltage N-channel MOSFET in a TO220F package. With a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, this MOSFET is designed for applications that require high voltage handling. It uses SJ_Multi-EPI technology to ensure high withstand voltage and good thermal performance. Although its on-resistance is relatively high, its high withstand voltage capability makes it perform well in high voltage applications.
The F7NM80-VB is a high voltage, high withstand voltage N-channel MOSFET in a TO220F package. With a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of ±30V, this MOSFET is designed for applications that require high voltage handling. It uses SJ_Multi-EPI technology to ensure high withstand voltage and good thermal performance. Although its on-resistance is relatively high, its high withstand voltage capability makes it perform well in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power supply**: The high withstand voltage capability of the F7NM80-VB makes it particularly suitable for high-voltage power supply designs, such as industrial power supplies, medical equipment power supplies, etc. In these applications, the MOSFET can reliably handle high voltage currents, ensuring system stability and safety.
2. **Switching power supply**: In switching power supplies (especially high-voltage switching power supplies), the F7NM80-VB can be used as the main switching element. Its high drain-source voltage allows it to operate safely in a high-voltage environment, helping to improve the overall efficiency and reliability of the system.
3. **Lighting system**: In high-voltage lighting systems (such as HID lamps and high-voltage halogen lamps), the high withstand voltage characteristics of the F7NM80-VB enable it to withstand high-voltage startup and operating conditions, ensuring stable lighting performance.
4. **Motor drive**: Although its on-resistance is high, the F7NM80-VB is still suitable for some high-voltage motor drive applications. Its voltage resistance enables it to operate stably in high-voltage motor control circuits and is suitable for industrial motors that require high-voltage drive.
The F7NM80-VB is a MOSFET designed for high-voltage applications. With its high voltage resistance and reliability, it demonstrates strong performance and stability in areas such as high-voltage power management, motor control, and lighting systems.
1. **High-voltage power supply**: The high withstand voltage capability of the F7NM80-VB makes it particularly suitable for high-voltage power supply designs, such as industrial power supplies, medical equipment power supplies, etc. In these applications, the MOSFET can reliably handle high voltage currents, ensuring system stability and safety.
2. **Switching power supply**: In switching power supplies (especially high-voltage switching power supplies), the F7NM80-VB can be used as the main switching element. Its high drain-source voltage allows it to operate safely in a high-voltage environment, helping to improve the overall efficiency and reliability of the system.
3. **Lighting system**: In high-voltage lighting systems (such as HID lamps and high-voltage halogen lamps), the high withstand voltage characteristics of the F7NM80-VB enable it to withstand high-voltage startup and operating conditions, ensuring stable lighting performance.
4. **Motor drive**: Although its on-resistance is high, the F7NM80-VB is still suitable for some high-voltage motor drive applications. Its voltage resistance enables it to operate stably in high-voltage motor control circuits and is suitable for industrial motors that require high-voltage drive.
The F7NM80-VB is a MOSFET designed for high-voltage applications. With its high voltage resistance and reliability, it demonstrates strong performance and stability in areas such as high-voltage power management, motor control, and lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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