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F7NM50N-VB Product details
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F7NM50N-VB MOSFET Product Introduction
The F7NM50N-VB is a high voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of up to ±30V. This MOSFET uses planar technology and has high withstand voltage and stable performance. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable switching operation at lower gate voltages. The F7NM50N-VB has an on-resistance (RDS(ON)) of 680mΩ and can handle drain currents up to 12A, making it suitable for applications requiring high withstand voltage and high reliability.
The F7NM50N-VB is a high voltage single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of up to ±30V. This MOSFET uses planar technology and has high withstand voltage and stable performance. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable switching operation at lower gate voltages. The F7NM50N-VB has an on-resistance (RDS(ON)) of 680mΩ and can handle drain currents up to 12A, making it suitable for applications requiring high withstand voltage and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F7NM50N-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 680mΩ @ VGS=10V
- **Drain current (ID): ** 12A
- **Technology type (Technology): ** Planar
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 680mΩ @ VGS=10V
- **Drain current (ID): ** 12A
- **Technology type (Technology): ** Planar
Domain and module applications：
F7NM50N-VB MOSFET Applicable fields and application modules
F7NM50N-VB MOSFET has a wide range of applications in multiple fields due to its high withstand voltage characteristics and reliable performance:
1. **High-voltage power management:** Due to its 650V drain-source voltage capability, F7NM50N-VB is very suitable for high-voltage power management systems. It can work stably in high-voltage environments and is widely used in AC-DC converters, UPS systems, and high-voltage power modules to provide efficient switching performance and power protection.
2. **Industrial power switch:** In the industrial field, F7NM50N-VB is capable of handling high voltage and high current loads and is suitable for various power switching applications such as motor drives and power conditioning modules. Its withstand voltage characteristics enable it to withstand high voltage transients in industrial environments, ensuring system reliability and stability.
3. **Switch mode power supply (SMPS):** This MOSFET is suitable for switch mode power supplies such as switching power supplies and converters. Its high withstand voltage and moderate on-resistance enable it to efficiently switch high-voltage circuits, improving the overall efficiency and performance of the system.
4. **Power Electronics Applications:** F7NM50N-VB is also suitable for various power electronics applications, such as high-voltage converters and power factor correction (PFC) circuits. It can provide reliable switching operation in high-voltage environments, ensuring efficient operation and long life of the equipment.
With its high voltage tolerance and stable performance, F7NM50N-VB MOSFET is an ideal choice for high-voltage applications, meeting the needs of modern electronic equipment for high reliability and high performance.
F7NM50N-VB MOSFET has a wide range of applications in multiple fields due to its high withstand voltage characteristics and reliable performance:
1. **High-voltage power management:** Due to its 650V drain-source voltage capability, F7NM50N-VB is very suitable for high-voltage power management systems. It can work stably in high-voltage environments and is widely used in AC-DC converters, UPS systems, and high-voltage power modules to provide efficient switching performance and power protection.
2. **Industrial power switch:** In the industrial field, F7NM50N-VB is capable of handling high voltage and high current loads and is suitable for various power switching applications such as motor drives and power conditioning modules. Its withstand voltage characteristics enable it to withstand high voltage transients in industrial environments, ensuring system reliability and stability.
3. **Switch mode power supply (SMPS):** This MOSFET is suitable for switch mode power supplies such as switching power supplies and converters. Its high withstand voltage and moderate on-resistance enable it to efficiently switch high-voltage circuits, improving the overall efficiency and performance of the system.
4. **Power Electronics Applications:** F7NM50N-VB is also suitable for various power electronics applications, such as high-voltage converters and power factor correction (PFC) circuits. It can provide reliable switching operation in high-voltage environments, ensuring efficient operation and long life of the equipment.
With its high voltage tolerance and stable performance, F7NM50N-VB MOSFET is an ideal choice for high-voltage applications, meeting the needs of modern electronic equipment for high reliability and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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