F7N60-VB TO220F Product details
Product introduction:
The F7N60-VB is a high-voltage single N-channel MOSFET in a TO220F package designed for high voltage and high power applications. The device has a maximum drain-source voltage (VDS) of 650V and can withstand gate-source voltages (VGS) of up to ±30V. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction under appropriate gate voltage. Although its on-resistance (RDS(ON)) is 830mΩ at a 10V gate drive, which is relatively high, it is designed mainly for applications that require high voltage and high current. With a continuous drain current capability of 10A, this MOSFET is suitable for switching applications in various high power and high voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications:
The high withstand voltage and high current capabilities of the F7N60-VB MOSFET make it widely used in the following fields and modules:
1. **High voltage power management**: In high voltage power management systems, the F7N60-VB is capable of handling high voltages of 650V and is suitable for high voltage DC-DC converters and power management modules. Its high withstand voltage characteristics enable it to provide stable switching control under high voltage input conditions.
2. **Power amplifier**: This MOSFET is suitable for high power amplifier circuits and can operate stably under high voltage and high current conditions. Its high voltage withstand capability and appropriate current capability make it an ideal choice in power amplifiers, especially in applications that need to handle high voltage signals.
3. **Motor drive control**: In motor drive systems, the F7N60-VB can be used as a high voltage switch to control the start, stop and speed regulation of the motor. Its high voltage withstand capability ensures reliability and stability in high voltage motor drive environments.
4. **Frequency Converters and Inverters**: In frequency converters and inverters, the high withstand voltage characteristics of the F7N60-VB can handle high voltage inputs and ensure efficient conversion of electrical energy. Especially in applications that require high voltage switching and high current handling, such as industrial frequency converters and solar inverters, this MOSFET provides excellent performance.
5. **Power Switches**: In applications that require high voltage and high power switching, such as high power power switches and power control modules, the F7N60-VB provides high withstand voltage capabilities and reliable current control to ensure stable operation of the power system.
With its high voltage tolerance and stable current handling capabilities, the F7N60-VB MOSFET performs well in a variety of high voltage, high power applications.
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