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F7807V-VB Product details

Product introduction:

Product Introduction

**F7807V-VB** is a high-performance single N-channel MOSFET in SOP8 package, designed for high-efficiency switching applications. It has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V, suitable for switching and control tasks in various electronic devices. This MOSFET adopts Trench technology, has low on-resistance and high switching efficiency, and can achieve efficient conduction at a lower gate-source voltage. Its threshold voltage (Vth) is 1.7V, which enables reliable switching operation under low gate-source voltage conditions. F7807V-VB provides an on-resistance of 11mΩ (RDS(ON)@VGS=4.5V) and 8mΩ (RDS(ON)@VGS=10V), and a maximum drain current (ID) of 13A. It is an excellent MOSFET in various power management and load control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: F7807V-VB
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 13A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

**1. Power management: **
F7807V-VB performs well in power management systems. Its low on-resistance and high switching efficiency enable it to efficiently control current and reduce power consumption, making it very suitable for applications such as computer power modules, switching power supplies, and LED driver power supplies. It can effectively improve the overall efficiency and stability of the power system.

**2. DC-DC converter: **
In the DC-DC converter, F7807V-VB, as a switching element, can significantly improve the conversion efficiency. Its excellent switching performance and low on-resistance enable it to perform well in high-frequency and high-power conversion applications, thereby improving the performance and reliability of the system.

**3. Motor drive circuit: **
This MOSFET is used in the motor drive circuit to control the start and stop and speed regulation of the motor. Due to its low on-resistance and high-efficiency switching characteristics, F7807V-VB can effectively manage the current of the motor, reduce energy loss, and improve the overall efficiency and response speed of the motor system.

**4. Consumer Electronics Devices: **
F7807V-VB is suitable for various consumer electronic devices, such as smartphones, tablets, and home appliances. In these devices, this MOSFET is used for switch control and load management, providing fast response and stable performance to ensure efficient operation of the equipment.

**5. Battery Management System: **
In the battery management system, F7807V-VB is used for battery protection and load switching. Its low on-resistance and high switching efficiency help to effectively manage the battery charging and discharging process, improving the safety and energy efficiency of the system.

These application areas demonstrate the wide applicability of F7807V-VB in various high-efficiency switches and power management systems. With its excellent performance, this MOSFET can meet the needs of different fields for high-efficiency switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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