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F7755-VB Product details
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Product Introduction
**F7755-VB** is a high-performance dual P-Channel MOSFET using Trench technology and packaged in TSSOP8. This MOSFET is designed for applications that require high switching efficiency and low on-resistance, with a drain-to-source voltage (VDS) of -30V and a maximum drain current (ID) of -5.2A. Its gate threshold voltage (Vth) is -1.7V, which enables it to operate effectively at a lower gate drive voltage. The F7755-VB has an on-resistance of 55mΩ at VGS=4.5V and 36mΩ at VGS=10V, providing excellent switching performance and is suitable for high-efficiency power management and load switching applications.
**F7755-VB** is a high-performance dual P-Channel MOSFET using Trench technology and packaged in TSSOP8. This MOSFET is designed for applications that require high switching efficiency and low on-resistance, with a drain-to-source voltage (VDS) of -30V and a maximum drain current (ID) of -5.2A. Its gate threshold voltage (Vth) is -1.7V, which enables it to operate effectively at a lower gate drive voltage. The F7755-VB has an on-resistance of 55mΩ at VGS=4.5V and 36mΩ at VGS=10V, providing excellent switching performance and is suitable for high-efficiency power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Model**: F7755-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 55mΩ (on-resistance at VGS=4.5V)
- 36mΩ (on-resistance at VGS=10V)
- **ID**: -5.2A (maximum drain current)
- **Technology**: Trench (trench technology)
- **Model**: F7755-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 55mΩ (on-resistance at VGS=4.5V)
- 36mΩ (on-resistance at VGS=10V)
- **ID**: -5.2A (maximum drain current)
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and Modules
1. **Power Management**
- **F7755-VB** is suitable for high-efficiency power management systems. Its low RDS(ON) characteristics can significantly reduce power consumption, especially in DC-DC converters and switching power supplies, effectively reducing power losses and improving system efficiency.
2. **Load Switch**
- In applications that require high-efficiency load switches, such as smart home devices, automotive electronics, and battery management systems, the low on-resistance and high current capability of this MOSFET ensure efficient and stable operation of the load switch, capable of handling higher load currents.
3. **Battery Protection Circuit**
- **F7755-VB** is also suitable for switch control in battery protection circuits, especially in portable electronic devices and chargers. Its excellent switching performance and low power consumption characteristics can effectively protect the battery from overcharging and over-discharging.
4. **High-efficiency power distribution**
- This MOSFET can be used in high-efficiency power distribution modules, especially in power distribution networks that require high switching efficiency and low power consumption. Its dual-channel design is suitable for power distribution applications that require bidirectional switching functions.
**F7755-VB**'s high switching efficiency and low on-resistance enable it to perform well in multiple fields such as power management, load switching, battery protection and power distribution, providing a reliable solution for various electronic devices and systems.
1. **Power Management**
- **F7755-VB** is suitable for high-efficiency power management systems. Its low RDS(ON) characteristics can significantly reduce power consumption, especially in DC-DC converters and switching power supplies, effectively reducing power losses and improving system efficiency.
2. **Load Switch**
- In applications that require high-efficiency load switches, such as smart home devices, automotive electronics, and battery management systems, the low on-resistance and high current capability of this MOSFET ensure efficient and stable operation of the load switch, capable of handling higher load currents.
3. **Battery Protection Circuit**
- **F7755-VB** is also suitable for switch control in battery protection circuits, especially in portable electronic devices and chargers. Its excellent switching performance and low power consumption characteristics can effectively protect the battery from overcharging and over-discharging.
4. **High-efficiency power distribution**
- This MOSFET can be used in high-efficiency power distribution modules, especially in power distribution networks that require high switching efficiency and low power consumption. Its dual-channel design is suitable for power distribution applications that require bidirectional switching functions.
**F7755-VB**'s high switching efficiency and low on-resistance enable it to perform well in multiple fields such as power management, load switching, battery protection and power distribution, providing a reliable solution for various electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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