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F7755G-VB Product details
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F7755G-VB TSSOP8 MOSFET Product Introduction
The F7755G-VB is a high-performance dual P-channel MOSFET in a TSSOP8 package, designed for applications requiring high performance and low power consumption. Its maximum drain-source voltage (VDS) is -30V, and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V, which enables switching operation at low gate-source voltages. The on-resistance (RDS(ON)) of the F7755G-VB is 55mΩ at VGS=4.5V and 36mΩ at VGS=10V, ensuring high performance and low power consumption. This MOSFET supports a maximum drain current (ID) of -5.2A, suitable for a variety of high-efficiency power and switching applications.
The F7755G-VB is a high-performance dual P-channel MOSFET in a TSSOP8 package, designed for applications requiring high performance and low power consumption. Its maximum drain-source voltage (VDS) is -30V, and the gate-source voltage (VGS) range is ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V, which enables switching operation at low gate-source voltages. The on-resistance (RDS(ON)) of the F7755G-VB is 55mΩ at VGS=4.5V and 36mΩ at VGS=10V, ensuring high performance and low power consumption. This MOSFET supports a maximum drain current (ID) of -5.2A, suitable for a variety of high-efficiency power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
F7755G-VB MOSFET Detailed parameter description
- **Package type (Package): ** TSSOP8
- **Configuration (Configuration): ** Dual-P+P-Channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): ** 55mΩ@VGS=4.5V; 36mΩ@VGS=10V
- **Maximum drain current (ID): ** -5.2A
- **Technology (Technology): ** Trench
- **Package type (Package): ** TSSOP8
- **Configuration (Configuration): ** Dual-P+P-Channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): ** 55mΩ@VGS=4.5V; 36mΩ@VGS=10V
- **Maximum drain current (ID): ** -5.2A
- **Technology (Technology): ** Trench
Domain and module applications：
F7755G-VB MOSFET Application Fields and Module Examples
The design features of F7755G-VB make it superior in many fields. Here are several typical application scenarios:
1. **Power Management**: In DC-DC converters, power switches and battery management systems, F7755G-VB can be used for efficient power switching and load switching, helping to improve power conversion efficiency and extend battery life.
2. **Portable Electronic Devices**: In smartphones, tablets and other portable devices, F7755G-VB can be used for power switching and battery protection circuits to ensure high efficiency and long-term use of the device.
3. **Automotive Electronics**: In automotive electronic systems, such as power window control, headlight control and electric seat adjustment, F7755G-VB can provide stable switching functions to improve the reliability and performance of automotive electronic systems.
4. **Consumer electronics**: In consumer electronics such as TVs, audio systems, and home automation equipment, this MOSFET can be used for power switching, LED lighting control, etc., to help achieve high-efficiency and low-power operation.
5. **Motor drive**: In motor drive applications, the F7755G-VB can be used for switching operations in motor control and drive systems, especially in applications that require high efficiency and stability.
In short, the high withstand voltage, low on-resistance, and high drain current capability of the F7755G-VB make it very suitable for a variety of high-efficiency and low-power applications, and can meet the needs of modern electronic devices for high-performance switching components.
The design features of F7755G-VB make it superior in many fields. Here are several typical application scenarios:
1. **Power Management**: In DC-DC converters, power switches and battery management systems, F7755G-VB can be used for efficient power switching and load switching, helping to improve power conversion efficiency and extend battery life.
2. **Portable Electronic Devices**: In smartphones, tablets and other portable devices, F7755G-VB can be used for power switching and battery protection circuits to ensure high efficiency and long-term use of the device.
3. **Automotive Electronics**: In automotive electronic systems, such as power window control, headlight control and electric seat adjustment, F7755G-VB can provide stable switching functions to improve the reliability and performance of automotive electronic systems.
4. **Consumer electronics**: In consumer electronics such as TVs, audio systems, and home automation equipment, this MOSFET can be used for power switching, LED lighting control, etc., to help achieve high-efficiency and low-power operation.
5. **Motor drive**: In motor drive applications, the F7755G-VB can be used for switching operations in motor control and drive systems, especially in applications that require high efficiency and stability.
In short, the high withstand voltage, low on-resistance, and high drain current capability of the F7755G-VB make it very suitable for a variety of high-efficiency and low-power applications, and can meet the needs of modern electronic devices for high-performance switching components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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