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F7752G-VB Product details
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F7752G-VB MOSFET Product Introduction
The F7752G-VB is a high-performance dual N-channel MOSFET in a TSSOP8 package with a common drain configuration. This MOSFET is manufactured using Trench technology and has excellent switching performance and low on-resistance. With a maximum drain-source voltage of 30V and a maximum drain current of 8.6A, it is suitable for applications requiring high efficiency and low power consumption. The F7752G-VB offers low on-resistance (19mΩ @ VGS=4.5V and 12mΩ @ VGS=10V), enabling it to excel in load switching, power management, and signal processing applications.
The F7752G-VB is a high-performance dual N-channel MOSFET in a TSSOP8 package with a common drain configuration. This MOSFET is manufactured using Trench technology and has excellent switching performance and low on-resistance. With a maximum drain-source voltage of 30V and a maximum drain current of 8.6A, it is suitable for applications requiring high efficiency and low power consumption. The F7752G-VB offers low on-resistance (19mΩ @ VGS=4.5V and 12mΩ @ VGS=10V), enabling it to excel in load switching, power management, and signal processing applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The low on-resistance and high current handling capability of the F7752G-VB MOSFET make it suitable for a variety of high-performance and low-power applications:
1. **Power Management**: The F7752G-VB excels in power management circuits. Its low on-resistance and high drain current enable it to operate efficiently in power switching and regulation circuits, reducing power consumption and improving system efficiency.
2. **Load Switch**: Due to its excellent on-performance, the F7752G-VB is suitable for load switching applications. In these applications, such as battery-powered devices and power switches, the F7752G-VB can provide reliable switching functions to ensure stable operation of the load.
3. **Power Amplifier**: In power amplifier designs, the F7752G-VB's high current handling capability and low on-resistance enable it to efficiently control power signals and improve the overall performance of the amplifier.
4. **DC-DC Converter**: F7752G-VB can be used as a switching element in DC-DC converters, and its low on-resistance helps improve conversion efficiency and stability. Especially in high-frequency switching applications, the performance of this MOSFET is particularly critical.
5. **Signal Processing**: In applications that need to process high-current signals, such as audio amplification and signal conditioning circuits, F7752G-VB can provide stable switching performance and low loss characteristics, ensuring high signal fidelity and high system efficiency.
F7752G-VB MOSFET, with its excellent electrical performance and compact package, is an ideal choice for efficient power management, load switching and signal processing applications.
The low on-resistance and high current handling capability of the F7752G-VB MOSFET make it suitable for a variety of high-performance and low-power applications:
1. **Power Management**: The F7752G-VB excels in power management circuits. Its low on-resistance and high drain current enable it to operate efficiently in power switching and regulation circuits, reducing power consumption and improving system efficiency.
2. **Load Switch**: Due to its excellent on-performance, the F7752G-VB is suitable for load switching applications. In these applications, such as battery-powered devices and power switches, the F7752G-VB can provide reliable switching functions to ensure stable operation of the load.
3. **Power Amplifier**: In power amplifier designs, the F7752G-VB's high current handling capability and low on-resistance enable it to efficiently control power signals and improve the overall performance of the amplifier.
4. **DC-DC Converter**: F7752G-VB can be used as a switching element in DC-DC converters, and its low on-resistance helps improve conversion efficiency and stability. Especially in high-frequency switching applications, the performance of this MOSFET is particularly critical.
5. **Signal Processing**: In applications that need to process high-current signals, such as audio amplification and signal conditioning circuits, F7752G-VB can provide stable switching performance and low loss characteristics, ensuring high signal fidelity and high system efficiency.
F7752G-VB MOSFET, with its excellent electrical performance and compact package, is an ideal choice for efficient power management, load switching and signal processing applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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