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F7751-VB Product details
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F7751-VB MOSFET Product Introduction
F7751-VB is a dual P-channel MOSFET in TSSOP8 package. This MOSFET has a maximum drain-source voltage of -30V and is suitable for low-voltage applications that require high current and high withstand voltage. Its gate-source threshold voltage is -1.7V, which is suitable for stable switching at lower gate voltages. The on-resistance of F7751-VB is 55mΩ (VGS = 4.5V) and 36mΩ (VGS = 10V), respectively, with low power consumption and excellent switching characteristics. This MOSFET uses Trench technology, which provides good switching speed and high efficiency, and is suitable for use in high-efficiency power supplies and switching applications.
F7751-VB is a dual P-channel MOSFET in TSSOP8 package. This MOSFET has a maximum drain-source voltage of -30V and is suitable for low-voltage applications that require high current and high withstand voltage. Its gate-source threshold voltage is -1.7V, which is suitable for stable switching at lower gate voltages. The on-resistance of F7751-VB is 55mΩ (VGS = 4.5V) and 36mΩ (VGS = 10V), respectively, with low power consumption and excellent switching characteristics. This MOSFET uses Trench technology, which provides good switching speed and high efficiency, and is suitable for use in high-efficiency power supplies and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
F7751-VB MOSFET Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ (VGS = 4.5V)
- 36mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -5.2A
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ (VGS = 4.5V)
- 36mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -5.2A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The F7751-VB excels in power management modules for switching and controlling high current loads. Its lower on-resistance helps reduce power loss and improves the overall efficiency and stability of the power system.
2. **Battery Protection Circuit**: In battery protection circuits, the F7751-VB can effectively prevent overcurrent and short circuits, protecting the battery from damage. Its high current handling capability and low power consumption make it very reliable in battery protection applications.
3. **Power Switch**: This MOSFET also excels in power switch modules. Its dual-path design allows multiple high current loads to be handled in the same package, making it suitable for use in a variety of power switching applications, providing high efficiency and reliability.
4. **Motor Drive**: The F7751-VB is suitable for motor drive systems, especially in applications that require high current control. Its low on-resistance and high current capability can effectively control the start-up and operation of the motor, and improve the efficiency and reliability of the drive system.
5. **DC-DC Converter**: In the DC-DC converter, the dual P-channel MOSFET of F7751-VB can be used to efficiently control the power switch and improve the conversion efficiency. Its low power consumption characteristics help optimize the overall performance of the converter and are suitable for high-efficiency power supply design.
1. **Power Management**: The F7751-VB excels in power management modules for switching and controlling high current loads. Its lower on-resistance helps reduce power loss and improves the overall efficiency and stability of the power system.
2. **Battery Protection Circuit**: In battery protection circuits, the F7751-VB can effectively prevent overcurrent and short circuits, protecting the battery from damage. Its high current handling capability and low power consumption make it very reliable in battery protection applications.
3. **Power Switch**: This MOSFET also excels in power switch modules. Its dual-path design allows multiple high current loads to be handled in the same package, making it suitable for use in a variety of power switching applications, providing high efficiency and reliability.
4. **Motor Drive**: The F7751-VB is suitable for motor drive systems, especially in applications that require high current control. Its low on-resistance and high current capability can effectively control the start-up and operation of the motor, and improve the efficiency and reliability of the drive system.
5. **DC-DC Converter**: In the DC-DC converter, the dual P-channel MOSFET of F7751-VB can be used to efficiently control the power switch and improve the conversion efficiency. Its low power consumption characteristics help optimize the overall performance of the converter and are suitable for high-efficiency power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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