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F7750G-VB Product details

Product introduction:

Product Introduction

**F7750G-VB** is a high-efficiency dual P-channel MOSFET in TSSOP8 package. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, suitable for efficient switching and load control applications. Its threshold voltage (Vth) is -1.7V, enabling it to operate effectively at lower gate-source voltages. The F7750G-VB uses Trench technology to provide an on-resistance of 55mΩ (RDS(ON)@VGS=4.5V) and 36mΩ (RDS(ON)@VGS=10V), with a maximum drain current (ID) of -5.2A. This MOSFET has good switching performance and low power consumption, suitable for various power management and load control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
Detailed parameter description

- **Model**: F7750G-VB
- **Package**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -5.2A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

**1. Power management and voltage regulation modules: **
F7750G-VB is widely used in power management and voltage regulation modules. Due to its low on-resistance and high switching efficiency, this MOSFET can be used as a power switching element to help achieve efficient power conversion and voltage regulation, and is suitable for computer power supplies, industrial power systems and high-efficiency power modules.

**2. DC-DC converters and power distribution: **
In DC-DC converters and power distribution systems, F7750G-VB is able to provide stable switching performance. Its low on-resistance and moderate maximum leakage current enable it to efficiently manage power flow, and is suitable for application scenarios that require high switching frequency and low power consumption, such as battery-powered devices and high-efficiency power modules.

**3. Load switching and power protection: **
F7750G-VB is also suitable for load switching and power protection applications. In these applications, it can be used as a load switch or protection element to provide fast response and reliable current management. For example, in LED drive circuits and motor control, this MOSFET can be used to effectively switch loads and prevent current overload.

**4. Consumer electronics: **
In consumer electronics, such as home appliances, audio equipment, and other electronic devices, the F7750G-VB can be used for power switching and load control. Its efficient switching performance and low on-resistance make it an ideal choice for achieving low power consumption and high efficiency.

**5. Switching power supplies and converters: **
The F7750G-VB plays a key role in switching power supplies and converters, capable of handling high-frequency switching and power conversion. Its low on-resistance helps reduce power consumption and improve overall system efficiency, making it suitable for a variety of high-efficiency power supply systems and converter designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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