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F7707G-VB Product details
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Product Introduction
**F7707G-VB** is a high-efficiency P-Channel MOSFET that uses Trench technology and is packaged in TSSOP8. The drain-to-source voltage (VDS) of this MOSFET is -30V and the maximum drain current (ID) is -9A. Its gate threshold voltage (Vth) is -1.7V, and it can operate stably at a lower gate drive voltage. The on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V, providing excellent switching performance and low power consumption characteristics. The design goal of F7707G-VB is to improve efficiency and reliability, making it suitable for use in a variety of applications that require efficient switching and low power consumption.
**F7707G-VB** is a high-efficiency P-Channel MOSFET that uses Trench technology and is packaged in TSSOP8. The drain-to-source voltage (VDS) of this MOSFET is -30V and the maximum drain current (ID) is -9A. Its gate threshold voltage (Vth) is -1.7V, and it can operate stably at a lower gate drive voltage. The on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V, providing excellent switching performance and low power consumption characteristics. The design goal of F7707G-VB is to improve efficiency and reliability, making it suitable for use in a variety of applications that require efficient switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Model**: F7707G-VB
- **Package**: TSSOP8
- **Configuration**: Single P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 20mΩ (on-resistance at VGS=4.5V)
- 16mΩ (on-resistance at VGS=10V)
- **ID**: -9A (maximum drain current)
- **Technology**: Trench (trench technology)
- **Model**: F7707G-VB
- **Package**: TSSOP8
- **Configuration**: Single P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 20mΩ (on-resistance at VGS=4.5V)
- 16mΩ (on-resistance at VGS=10V)
- **ID**: -9A (maximum drain current)
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and modules
1. **Power management**
- **F7707G-VB** can be widely used in power management systems such as switching power supplies and DC-DC converters. Its low RDS(ON) characteristics enable it to effectively reduce power consumption and heat in power switches, improving overall system efficiency.
2. **Load switch**
- In application scenarios that require high-efficiency load switches, such as smart home devices and automation control systems, this MOSFET can stably control the load switch state, has low on-resistance and high current handling capability, and is suitable for use in load switch modules.
3. **Battery protection circuit**
- **F7707G-VB** is also suitable for battery protection circuits, especially in battery management systems, for overvoltage protection and overcurrent protection. Its high current capability and low power consumption ensure the reliability and efficiency of the battery protection circuit.
4. **Low Voltage Circuits**
- In low voltage circuit applications, such as low voltage power switches and power distribution modules, this MOSFET can effectively manage current and maintain low power consumption due to its excellent switching performance and low on-resistance.
**F7707G-VB**'s high performance and low power consumption make it excel in applications such as power management, load switching, battery protection, and low voltage circuits, providing a reliable solution for a variety of electronic devices and systems.
1. **Power management**
- **F7707G-VB** can be widely used in power management systems such as switching power supplies and DC-DC converters. Its low RDS(ON) characteristics enable it to effectively reduce power consumption and heat in power switches, improving overall system efficiency.
2. **Load switch**
- In application scenarios that require high-efficiency load switches, such as smart home devices and automation control systems, this MOSFET can stably control the load switch state, has low on-resistance and high current handling capability, and is suitable for use in load switch modules.
3. **Battery protection circuit**
- **F7707G-VB** is also suitable for battery protection circuits, especially in battery management systems, for overvoltage protection and overcurrent protection. Its high current capability and low power consumption ensure the reliability and efficiency of the battery protection circuit.
4. **Low Voltage Circuits**
- In low voltage circuit applications, such as low voltage power switches and power distribution modules, this MOSFET can effectively manage current and maintain low power consumption due to its excellent switching performance and low on-resistance.
**F7707G-VB**'s high performance and low power consumption make it excel in applications such as power management, load switching, battery protection, and low voltage circuits, providing a reliable solution for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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