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F7704G-VB Product details
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F7704G-VB MOSFET Product Introduction
The F7704G-VB is a high-performance P-channel MOSFET in a TSSOP8 package. With a maximum drain-source voltage of -30V, the device is suitable for low-voltage load switching and power management applications. Its gate-source threshold voltage is -1.7V, enabling efficient switching at lower gate voltages. The F7704G-VB has an on-resistance of 20mΩ (VGS = 4.5V) and 16mΩ (VGS = 10V), respectively, providing low-power, high-efficiency switching performance. Manufactured using Trench technology, this MOSFET offers excellent switching speed and low power consumption, making it suitable for a variety of high-efficiency power and switching applications.
The F7704G-VB is a high-performance P-channel MOSFET in a TSSOP8 package. With a maximum drain-source voltage of -30V, the device is suitable for low-voltage load switching and power management applications. Its gate-source threshold voltage is -1.7V, enabling efficient switching at lower gate voltages. The F7704G-VB has an on-resistance of 20mΩ (VGS = 4.5V) and 16mΩ (VGS = 10V), respectively, providing low-power, high-efficiency switching performance. Manufactured using Trench technology, this MOSFET offers excellent switching speed and low power consumption, making it suitable for a variety of high-efficiency power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
F7704G-VB MOSFET detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ (VGS = 4.5V)
- 16mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ (VGS = 4.5V)
- 16mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management module**: The F7704G-VB performs well in power management modules. Its low on-resistance and high current handling capability make it suitable for efficient load switching and power control, which can improve the overall efficiency of the power system and reduce power consumption.
2. **DC-DC converter**: In DC-DC converters, the F7704G-VB can be used as an efficient switching element. Its low on-resistance helps reduce the power loss of the converter, thereby improving the conversion efficiency and is suitable for high-efficiency power supply design.
3. **Motor control**: This MOSFET is suitable for motor control systems, especially in applications that require high current and low power consumption. Its excellent switching performance can provide stable motor startup and operation control, improving system reliability.
4. **Power switch**: The low on-resistance and high current capability of the F7704G-VB make it an ideal choice in various power switching applications. It can efficiently control high voltage loads and ensure the stability and efficiency of the power switching system.
5. **Battery protection circuit**: In the battery protection circuit, the high current handling capability and low on-resistance of F7704G-VB can effectively protect the battery from overcurrent and short circuit, ensuring the safety and stability of the battery.
1. **Power management module**: The F7704G-VB performs well in power management modules. Its low on-resistance and high current handling capability make it suitable for efficient load switching and power control, which can improve the overall efficiency of the power system and reduce power consumption.
2. **DC-DC converter**: In DC-DC converters, the F7704G-VB can be used as an efficient switching element. Its low on-resistance helps reduce the power loss of the converter, thereby improving the conversion efficiency and is suitable for high-efficiency power supply design.
3. **Motor control**: This MOSFET is suitable for motor control systems, especially in applications that require high current and low power consumption. Its excellent switching performance can provide stable motor startup and operation control, improving system reliability.
4. **Power switch**: The low on-resistance and high current capability of the F7704G-VB make it an ideal choice in various power switching applications. It can efficiently control high voltage loads and ensure the stability and efficiency of the power switching system.
5. **Battery protection circuit**: In the battery protection circuit, the high current handling capability and low on-resistance of F7704G-VB can effectively protect the battery from overcurrent and short circuit, ensuring the safety and stability of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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