F7703G-VB Product details
Product introduction:
**F7703G-VB** is a high-performance single P-channel MOSFET in a TSSOP8 package. Designed for high-efficiency power management applications, this MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) tolerance of ±20V. Its threshold voltage (Vth) is -1.7V, which is suitable for operation at low gate-source voltages. The F7703G-VB uses Trench technology to provide low on-resistance (20mΩ@VGS=4.5V and 16mΩ@VGS=10V) and a maximum drain current (ID) of -9A. This makes it excel in low-voltage switching applications, especially in environments that require high switching efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
- **Model**: F7703G-VB
- **Package**: TSSOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -9A
- **Technology**: Trench
Domain and module applications:
**1. Power management and battery-powered devices: **
F7703G-VB is suitable for power management systems and battery-powered devices, especially in applications requiring low voltage and high efficiency. For example, in portable electronic devices and mobile power management, the low on-resistance and high switching efficiency of this MOSFET can effectively extend battery life and improve overall energy efficiency.
**2. DC-DC converters and voltage regulator modules: **
In DC-DC converters and voltage regulator modules, F7703G-VB can be used as a switching element to achieve efficient power conversion. Its low on-resistance helps reduce energy loss and improve the conversion efficiency of the system, and is suitable for application scenarios requiring high current and stable voltage, such as computer power supply and industrial power supply systems.
**3. Low voltage switch and load switch: **
This MOSFET is also very suitable for low voltage switch and load switch applications. Its high efficiency and low on-resistance characteristics enable fast response and low power consumption when switching loads, suitable for various low-voltage load switching needs, such as LED driving and small motor control.
**4. Protection circuits and reverse current protection: **
F7703G-VB can be used in protection circuits and reverse current protection modules. In applications that need to prevent reverse current or overload conditions, the high switching performance and low on-resistance of this MOSFET can effectively protect the system from potential current overload problems.
**5. Consumer electronics: **
In consumer electronics such as TVs, audio equipment and home appliances, F7703G-VB can provide reliable power switching functions. Its excellent switching performance and low power consumption make it suitable for consumer electronics applications that require high efficiency and low heat.
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