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F7702G-VB Product details
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Product Introduction
**F7702G-VB** is a high-performance P-Channel MOSFET using Trench technology and packaged in TSSOP8. This MOSFET has a drain-to-source voltage (VDS) of -30V and a maximum drain current (ID) of -9A, making it ideal for applications that require high switching efficiency and high current handling capabilities. Its gate threshold voltage (Vth) is -1.7V, enabling stable switching at lower gate drive voltages. The on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V, providing excellent switching performance and low power consumption, making it an excellent performer in a variety of applications.
**F7702G-VB** is a high-performance P-Channel MOSFET using Trench technology and packaged in TSSOP8. This MOSFET has a drain-to-source voltage (VDS) of -30V and a maximum drain current (ID) of -9A, making it ideal for applications that require high switching efficiency and high current handling capabilities. Its gate threshold voltage (Vth) is -1.7V, enabling stable switching at lower gate drive voltages. The on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V, providing excellent switching performance and low power consumption, making it an excellent performer in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Model**: F7702G-VB
- **Package**: TSSOP8
- **Configuration**: Single P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 20mΩ (on-resistance at VGS=4.5V)
- 16mΩ (on-resistance at VGS=10V)
- **ID**: -9A (maximum drain current)
- **Technology**: Trench (trench technology)
- **Model**: F7702G-VB
- **Package**: TSSOP8
- **Configuration**: Single P-Channel MOSFET
- **VDS**: -30V (drain to source voltage)
- **VGS**: ±20V (gate to source voltage)
- **Vth**: -1.7V (threshold voltage)
- **RDS(ON)**:
- 20mΩ (on-resistance at VGS=4.5V)
- 16mΩ (on-resistance at VGS=10V)
- **ID**: -9A (maximum drain current)
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and modules
1. **Power management**
- **F7702G-VB** is ideal for power management modules such as switching power supplies and DC-DC converters. Its lower RDS(ON) enables it to effectively reduce power consumption and heat, making it suitable for efficient power switching applications.
2. **Load switch**
- In applications that require efficient load switching, such as electronic loads, automation control systems, this MOSFET can be used as a load switch. Its high current handling capability and low on-resistance ensure stable load control and long life.
3. **Battery protection circuit**
- **F7702G-VB** can be used in battery protection circuits, especially where high voltage tolerance and low power consumption are required. Its P-Channel configuration makes it suitable for overvoltage protection and overcurrent protection modules for batteries.
4. **Low Voltage Circuits**
- Due to its low on-resistance and high current capability, this MOSFET also performs well in low voltage circuits, such as low voltage power switches and power distribution modules. It is able to efficiently handle high currents while keeping power consumption low.
**F7702G-VB**'s high performance and low power consumption make it an important player in a variety of electronic applications, especially in power management and load switching scenarios that require high switching efficiency and low on-resistance.
1. **Power management**
- **F7702G-VB** is ideal for power management modules such as switching power supplies and DC-DC converters. Its lower RDS(ON) enables it to effectively reduce power consumption and heat, making it suitable for efficient power switching applications.
2. **Load switch**
- In applications that require efficient load switching, such as electronic loads, automation control systems, this MOSFET can be used as a load switch. Its high current handling capability and low on-resistance ensure stable load control and long life.
3. **Battery protection circuit**
- **F7702G-VB** can be used in battery protection circuits, especially where high voltage tolerance and low power consumption are required. Its P-Channel configuration makes it suitable for overvoltage protection and overcurrent protection modules for batteries.
4. **Low Voltage Circuits**
- Due to its low on-resistance and high current capability, this MOSFET also performs well in low voltage circuits, such as low voltage power switches and power distribution modules. It is able to efficiently handle high currents while keeping power consumption low.
**F7702G-VB**'s high performance and low power consumption make it an important player in a variety of electronic applications, especially in power management and load switching scenarios that require high switching efficiency and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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