Product introduction：
F7379I-VB MOSFET Product Introduction
The F7379I-VB is a high-performance bipolar N-channel and P-channel MOSFET in SOP8 package. It supports positive and negative voltage working environment, with a maximum drain-source voltage of ±30V, suitable for circuits that require positive and negative current handling. The F7379I-VB provides both N-channel and P-channel configurations, making it an excellent performer in bipolar power switching and control applications. Its gate-source threshold voltages are 1.6V and -1.7V respectively, and the low on-resistance (N-channel 18/40mΩ, P-channel 24/50mΩ) provides efficient switching performance at different gate-source voltages. Using Trench technology, the F7379I-VB achieves high switching speed and low power consumption, making it suitable for a variety of power electronic devices.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
F7379I-VB MOSFET Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual N-channel + P-channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel:
- 24mΩ (VGS = 4.5V)
- 18mΩ (VGS = 10V)
- P-channel:
- 50mΩ (VGS = 4.5V)
- 40mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**:
- N-Channel: ±8A
- P-Channel: ±8A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management system**: The F7379I-VB is suitable for switching applications in power management systems. Its bipolar configuration and high current handling capability enable it to effectively manage positive and negative power supplies while providing low on-resistance to optimize power conversion and control.
2. **H-bridge circuit**: In the H-bridge circuit, the combination of N-channel and P-channel MOSFETs of the F7379I-VB can handle positive and negative currents, making it ideal for motor drive and motor control applications. Its high current capability and low RDS(ON) enable it to provide stable drive performance.
3. **DC-DC converter**: The F7379I-VB can be used as a switching element in a DC-DC converter. Its low on-resistance and bipolar configuration ensure efficient voltage conversion while reducing switching losses and improving conversion efficiency.
4. **Load Switch**: In load switch applications, the bipolar characteristics of the F7379I-VB allow it to operate under different current and voltage conditions. Its low on-resistance and high current capability make it suitable for load switching and protection circuits.
5. **Power Amplifier**: For power amplifier applications that need to handle positive and negative voltages, the F7379I-VB provides stable switching performance and high current handling capabilities, suitable for efficient power amplifier designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
