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F7105Q-VB Product details

Product introduction:

Product Introduction

**F7105Q-VB** is a high-performance bipolar N+P-Channel MOSFET in SOP8 package. It combines the characteristics of N-Channel and P-Channel MOSFETs and is designed to provide efficient current switching functions. This MOSFET uses Trench technology, has a drain-source voltage of ±30V and excellent on-resistance, and can meet the needs of various power management and switching applications. F7105Q-VB is particularly suitable for occasions that require high switching efficiency and compact packaging.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Model**: F7105Q-VB
- **Package**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Drain-source withstand voltage (V_DS)**: ±30V
- **Gate-source withstand voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.6V (N-Channel), -1.7V (P-Channel)
- **On-resistance (R_DS(ON))**:
- N-Channel: 24mΩ (V_GS = 4.5V), 18mΩ (V_GS = 10V)
- P-Channel: 50mΩ (V_GS = 4.5V), 40mΩ (V_GS = 10V)
- **Maximum continuous drain current (I_D)**: ±8A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

1. **Power management**: The F7105Q-VB provides efficient switching functions in power management modules, suitable for DC-DC converters and power distribution circuits. Its low on-resistance and high current capability enable it to achieve stable current switching in high-efficiency power management systems.

2. **Load switch**: In applications that require efficient load switching, such as consumer electronics and home appliances, the dual MOSFET configuration of the F7105Q-VB allows bidirectional switching within the same package, saving space and improving the overall efficiency of the system.

3. **Motor drive**: Suitable for efficient switching applications in motor drives. With its low on-resistance and high current carrying capacity, the MOSFET is able to handle the high current demands during motor startup and operation.

4. **Automotive electronics**: In automotive electronic systems, the F7105Q-VB can be used for efficient switching control, such as power distribution and load switching, ensuring system reliability and performance. Its voltage resistance and switching efficiency are suitable for key components in automotive electrical systems.

5. **Communication Equipment**: This MOSFET is suitable for switching circuits in communication equipment, such as signal switching and power management. Its compact package and high-performance characteristics can meet the requirements of communication equipment for high efficiency and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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