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F640S-VB Product details
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Product Introduction
The F640S-VB is a high voltage N-channel MOSFET with a TO263 package type. The MOSFET is designed to handle drain-source voltages (VDS) up to 200V and is suitable for applications that require high voltage and high current handling capabilities. The F640S-VB has a continuous drain current (ID) of 40A, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 48mΩ@VGS=10V. The F640S-VB with Trench technology has good switching performance and low conduction losses, and can meet the requirements of a variety of high voltage power management and switching applications.
The F640S-VB is a high voltage N-channel MOSFET with a TO263 package type. The MOSFET is designed to handle drain-source voltages (VDS) up to 200V and is suitable for applications that require high voltage and high current handling capabilities. The F640S-VB has a continuous drain current (ID) of 40A, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 48mΩ@VGS=10V. The F640S-VB with Trench technology has good switching performance and low conduction losses, and can meet the requirements of a variety of high voltage power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
F640S-VB MOSFET is widely used in the following fields and modules due to its high voltage and high current handling capabilities:
1. **Power management system**: In high voltage power management systems such as DC-DC converters and switch mode power supplies (SMPS), F640S-VB can effectively handle high power and high voltage as a switching element to ensure efficient operation and stability of the system. Its 200V withstand voltage capability and low on-resistance of 48mΩ make it excel in these applications.
2. **Industrial control**: In industrial equipment, F640S-VB is suitable for motor drive, load switching and other high voltage control applications. Its 40A drain current handling capability and high voltage withstand capability make it very reliable in industrial environments.
3. **Electric vehicles**: In the power system and charging equipment of electric vehicles, F640S-VB can be used as a high voltage power switch to handle the high power requirements during the charging process of electric vehicles. Its high voltage and high current capabilities ensure an efficient and safe charging process.
4. **High Voltage Home and Commercial Appliances**: F640S-VB is also widely used in high voltage home and commercial appliances, such as high voltage power modules and power management systems. These devices require stable and efficient power switches, and the characteristics of F640S-VB can meet these needs and provide reliable performance.
F640S-VB MOSFET is an ideal choice for various high voltage and high power applications due to its excellent high voltage and high current handling capabilities, ensuring the reliability and efficient performance of the equipment.
F640S-VB MOSFET is widely used in the following fields and modules due to its high voltage and high current handling capabilities:
1. **Power management system**: In high voltage power management systems such as DC-DC converters and switch mode power supplies (SMPS), F640S-VB can effectively handle high power and high voltage as a switching element to ensure efficient operation and stability of the system. Its 200V withstand voltage capability and low on-resistance of 48mΩ make it excel in these applications.
2. **Industrial control**: In industrial equipment, F640S-VB is suitable for motor drive, load switching and other high voltage control applications. Its 40A drain current handling capability and high voltage withstand capability make it very reliable in industrial environments.
3. **Electric vehicles**: In the power system and charging equipment of electric vehicles, F640S-VB can be used as a high voltage power switch to handle the high power requirements during the charging process of electric vehicles. Its high voltage and high current capabilities ensure an efficient and safe charging process.
4. **High Voltage Home and Commercial Appliances**: F640S-VB is also widely used in high voltage home and commercial appliances, such as high voltage power modules and power management systems. These devices require stable and efficient power switches, and the characteristics of F640S-VB can meet these needs and provide reliable performance.
F640S-VB MOSFET is an ideal choice for various high voltage and high power applications due to its excellent high voltage and high current handling capabilities, ensuring the reliability and efficient performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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