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F640NS-VB Product details
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F640NS-VB MOSFET Product Introduction
F640NS-VB is a high voltage single N-channel MOSFET packaged in TO263. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 3V, its on-resistance (RDS(ON)) is 48mΩ at VGS=10V, and it can carry a maximum continuous drain current (ID) of 40A. F640NS-VB uses trench technology, which provides excellent switching performance and low power consumption, and is very suitable for high voltage power management and power conversion applications.
F640NS-VB is a high voltage single N-channel MOSFET packaged in TO263. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 3V, its on-resistance (RDS(ON)) is 48mΩ at VGS=10V, and it can carry a maximum continuous drain current (ID) of 40A. F640NS-VB uses trench technology, which provides excellent switching performance and low power consumption, and is very suitable for high voltage power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F640NS-VB Detailed parameter description
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 200V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 48mΩ @ VGS=10V
- **Drain current (ID): ** 40A
- **Technology type (Technology): ** Trench technology (Trench Technology)
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 200V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 48mΩ @ VGS=10V
- **Drain current (ID): ** 40A
- **Technology type (Technology): ** Trench technology (Trench Technology)
Domain and module applications：
Application fields and module examples
The high voltage and high current handling capabilities of the F640NS-VB MOSFET enable it to excel in multiple application fields. Here are some typical application examples:
1. **Power management system**: In power management systems, such as high-voltage DC-DC converters and AC-DC converters, the F640NS-VB, as a switching element, can effectively handle high voltage and high current to ensure the stability and efficiency of the power system.
2. **Industrial motor drive**: In industrial motor drive systems, the F640NS-VB can be used to control high-voltage motors and other power loads. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the motor drive system.
3. **High voltage switch**: In high voltage switching applications, such as high voltage relays and power transfer switches, the F640NS-VB provides stable switching performance. Its high drain-source voltage capability enables it to handle switching operations in high voltage circuits.
4. **Power Conversion Module**: In power conversion modules, such as power adapters and battery management systems, the low on-resistance and high current capability of the F640NS-VB help improve power conversion efficiency and reduce heat generation in the system.
The high voltage and high current handling capabilities, low on-resistance, and trench technology of the F640NS-VB make it an ideal choice for high voltage power and power management applications.
The high voltage and high current handling capabilities of the F640NS-VB MOSFET enable it to excel in multiple application fields. Here are some typical application examples:
1. **Power management system**: In power management systems, such as high-voltage DC-DC converters and AC-DC converters, the F640NS-VB, as a switching element, can effectively handle high voltage and high current to ensure the stability and efficiency of the power system.
2. **Industrial motor drive**: In industrial motor drive systems, the F640NS-VB can be used to control high-voltage motors and other power loads. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the motor drive system.
3. **High voltage switch**: In high voltage switching applications, such as high voltage relays and power transfer switches, the F640NS-VB provides stable switching performance. Its high drain-source voltage capability enables it to handle switching operations in high voltage circuits.
4. **Power Conversion Module**: In power conversion modules, such as power adapters and battery management systems, the low on-resistance and high current capability of the F640NS-VB help improve power conversion efficiency and reduce heat generation in the system.
The high voltage and high current handling capabilities, low on-resistance, and trench technology of the F640NS-VB make it an ideal choice for high voltage power and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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