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F6218S-VB Product details
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F6218S-VB MOSFET Product Introduction
The F6218S-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET supports drain-source voltage (VDS) up to -150V and gate-source voltage (VGS) of ±20V, and its gate threshold voltage (Vth) is -2V. The F6218S-VB has an on-resistance (RDS(ON)) of 150mΩ at VGS=10V and can carry a maximum continuous drain current (ID) of -20A. The trench technology used provides excellent conduction performance and low power consumption, enabling it to perform well in demanding application scenarios.
The F6218S-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET supports drain-source voltage (VDS) up to -150V and gate-source voltage (VGS) of ±20V, and its gate threshold voltage (Vth) is -2V. The F6218S-VB has an on-resistance (RDS(ON)) of 150mΩ at VGS=10V and can carry a maximum continuous drain current (ID) of -20A. The trench technology used provides excellent conduction performance and low power consumption, enabling it to perform well in demanding application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | 150mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
F6218S-VB Detailed parameter description
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -150V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** -2V
- **On-resistance (RDS(ON)): ** 150mΩ @ VGS=10V
- **Drain current (ID): ** -20A
- **Technology type (Technology): ** Trench technology
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -150V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** -2V
- **On-resistance (RDS(ON)): ** 150mΩ @ VGS=10V
- **Drain current (ID): ** -20A
- **Technology type (Technology): ** Trench technology
Domain and module applications：
Applications and Module Examples
The high voltage and high current handling capabilities of the F6218S-VB MOSFET enable it to excel in a number of demanding applications. Here are some typical application examples:
1. **High Voltage Power Management**: In high voltage power management systems, such as high voltage DC-DC converters and power protection circuits, the F6218S-VB can be used as a high voltage switching element. Its high drain-source voltage and high current handling capabilities ensure the stability and safety of the power system.
2. **Battery Management System (BMS)**: In battery management systems, especially for high voltage battery pack applications, the F6218S-VB can be used for load switching and battery protection. Its high current capability and low on-resistance help improve the efficiency and life of the battery pack.
3. **Industrial Control**: In industrial control systems, such as motor drives and high current load control, the high voltage and current handling capabilities of the F6218S-VB make it an ideal choice. Its trench technology provides excellent switching performance and power efficiency.
4. **High Voltage Switch**: In applications that require high voltage switching, such as high voltage relays and power transfer switches, the F6218S-VB can be used to control high voltage circuits. Its reliable switching performance and high current capability ensure system reliability and stability.
The high voltage handling capability and trench technology of the F6218S-VB enable it to provide an efficient and stable switching solution in these application scenarios.
The high voltage and high current handling capabilities of the F6218S-VB MOSFET enable it to excel in a number of demanding applications. Here are some typical application examples:
1. **High Voltage Power Management**: In high voltage power management systems, such as high voltage DC-DC converters and power protection circuits, the F6218S-VB can be used as a high voltage switching element. Its high drain-source voltage and high current handling capabilities ensure the stability and safety of the power system.
2. **Battery Management System (BMS)**: In battery management systems, especially for high voltage battery pack applications, the F6218S-VB can be used for load switching and battery protection. Its high current capability and low on-resistance help improve the efficiency and life of the battery pack.
3. **Industrial Control**: In industrial control systems, such as motor drives and high current load control, the high voltage and current handling capabilities of the F6218S-VB make it an ideal choice. Its trench technology provides excellent switching performance and power efficiency.
4. **High Voltage Switch**: In applications that require high voltage switching, such as high voltage relays and power transfer switches, the F6218S-VB can be used to control high voltage circuits. Its reliable switching performance and high current capability ensure system reliability and stability.
The high voltage handling capability and trench technology of the F6218S-VB enable it to provide an efficient and stable switching solution in these application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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