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F5852-VB Product details
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F5852-VB MOSFET Product Introduction
The F5852-VB is a high-performance dual N-channel MOSFET in a SOT23-6 package, suitable for compact circuits that require multi-channel switching. The MOSFET supports drain-source voltage (VDS) up to 20V and gate-source voltage (VGS) of ±12V. Its gate threshold voltage (Vth) is in the range of 0.5V to 1.5V, and it can provide an on-resistance (RDS(ON)) of 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. The F5852-VB supports a continuous drain current (ID) of up to 6A and uses trench technology to provide high efficiency and low power consumption.
The F5852-VB is a high-performance dual N-channel MOSFET in a SOT23-6 package, suitable for compact circuits that require multi-channel switching. The MOSFET supports drain-source voltage (VDS) up to 20V and gate-source voltage (VGS) of ±12V. Its gate threshold voltage (Vth) is in the range of 0.5V to 1.5V, and it can provide an on-resistance (RDS(ON)) of 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V. The F5852-VB supports a continuous drain current (ID) of up to 6A and uses trench technology to provide high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
F5852-VB Detailed parameter description
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Dual-N+N-Channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** ±12V
- **Gate threshold voltage (Vth): ** 0.5~1.5V
- **On-resistance (RDS(ON)): **
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID): ** 6A
- **Technology type (Technology): ** Trench technology
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Dual-N+N-Channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** ±12V
- **Gate threshold voltage (Vth): ** 0.5~1.5V
- **On-resistance (RDS(ON)): **
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID): ** 6A
- **Technology type (Technology): ** Trench technology
Domain and module applications：
Application fields and module examples
The dual-channel design and low on-resistance of the F5852-VB MOSFET make it suitable for a variety of application scenarios, especially in circuits with limited space and high-efficiency switching. Here are some typical application examples:
1. **Power management and distribution**: In power management circuits, the F5852-VB can be used for efficient current switching and distribution. Its dual N-channel configuration allows multiple switching functions to be implemented in one package, saving circuit board space and reducing the number of components.
2. **Small electric devices**: In small electric devices and portable electronic products such as mobile power supplies and handheld tools, the F5852-VB can be used as a load switch and power management. Its compact package and high efficiency make it suitable for these space-limited applications.
3. **LED drive circuit**: In LED drive circuits, the low on-resistance and high current handling capability of the F5852-VB can effectively control the brightness and switching state of the LED, providing a reliable lighting solution.
4. **Automation systems**: In automation systems, such as small relay and sensor control, the F5852-VB can be used to control high current loads and signal switching. Its dual-channel design is suitable for control modules that require multi-channel switching, improving the flexibility and functionality of the system.
The high performance and dual-channel design of the F5852-VB make it excel in these fields, providing a compact and reliable switching solution.
The dual-channel design and low on-resistance of the F5852-VB MOSFET make it suitable for a variety of application scenarios, especially in circuits with limited space and high-efficiency switching. Here are some typical application examples:
1. **Power management and distribution**: In power management circuits, the F5852-VB can be used for efficient current switching and distribution. Its dual N-channel configuration allows multiple switching functions to be implemented in one package, saving circuit board space and reducing the number of components.
2. **Small electric devices**: In small electric devices and portable electronic products such as mobile power supplies and handheld tools, the F5852-VB can be used as a load switch and power management. Its compact package and high efficiency make it suitable for these space-limited applications.
3. **LED drive circuit**: In LED drive circuits, the low on-resistance and high current handling capability of the F5852-VB can effectively control the brightness and switching state of the LED, providing a reliable lighting solution.
4. **Automation systems**: In automation systems, such as small relay and sensor control, the F5852-VB can be used to control high current loads and signal switching. Its dual-channel design is suitable for control modules that require multi-channel switching, improving the flexibility and functionality of the system.
The high performance and dual-channel design of the F5852-VB make it excel in these fields, providing a compact and reliable switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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