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F5850-VB Product details
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F5850-VB MOSFET Product Introduction
The F5850-VB is a high-performance dual P-channel MOSFET in a SOT23-6 package. It is designed for low voltage negative voltage applications and has a drain-source voltage tolerance of -20V. This MOSFET is manufactured using Trench technology, providing low on-resistance and moderate drain current capability, suitable for compact electronic devices that require negative voltage switching and power management. The F5850-VB is designed to provide reliable switching performance even in space-constrained applications.
The F5850-VB is a high-performance dual P-channel MOSFET in a SOT23-6 package. It is designed for low voltage negative voltage applications and has a drain-source voltage tolerance of -20V. This MOSFET is manufactured using Trench technology, providing low on-resistance and moderate drain current capability, suitable for compact electronic devices that require negative voltage switching and power management. The F5850-VB is designed to provide reliable switching performance even in space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=2.5V
- 75mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
F5850-VB MOSFET is widely used in the following fields and modules:
1. **Portable devices**: In smartphones, tablets and other portable electronic devices, F5850-VB is used as a negative voltage switch element to effectively manage power and control various functions of the device. Its compact SOT23-6 package is particularly suitable for space-constrained applications.
2. **Power management**: In low-voltage power management systems, F5850-VB can be used for negative voltage switching and power regulation, providing efficient power control functions to ensure efficient and stable operation of the system.
3. **Battery protection circuit**: In battery management and protection circuits, F5850-VB can be used as a negative voltage switch element to help prevent battery over-discharge or short circuit, protecting the safety of batteries and devices.
4. **LED drive circuit**: In LED drivers, F5850-VB can be used to control the switching operation of LEDs, provide stable negative voltage switching function, and ensure the brightness and performance of LEDs.
The dual P-channel design and low on-resistance of F5850-VB make it perform well in negative voltage switching and power management applications, and it is an important switching element in compact electronic devices.
F5850-VB MOSFET is widely used in the following fields and modules:
1. **Portable devices**: In smartphones, tablets and other portable electronic devices, F5850-VB is used as a negative voltage switch element to effectively manage power and control various functions of the device. Its compact SOT23-6 package is particularly suitable for space-constrained applications.
2. **Power management**: In low-voltage power management systems, F5850-VB can be used for negative voltage switching and power regulation, providing efficient power control functions to ensure efficient and stable operation of the system.
3. **Battery protection circuit**: In battery management and protection circuits, F5850-VB can be used as a negative voltage switch element to help prevent battery over-discharge or short circuit, protecting the safety of batteries and devices.
4. **LED drive circuit**: In LED drivers, F5850-VB can be used to control the switching operation of LEDs, provide stable negative voltage switching function, and ensure the brightness and performance of LEDs.
The dual P-channel design and low on-resistance of F5850-VB make it perform well in negative voltage switching and power management applications, and it is an important switching element in compact electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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