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F5810-VB Product details
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F5810-VB MOSFET Product Introduction
The F5810-VB is a dual P-channel MOSFET packaged in SOT23-6. Manufactured using advanced Trench technology, this MOSFET is particularly suitable for compact circuits that require dual-channel power switches. The F5810-VB supports a drain-source voltage (VDS) of -20V and a gate voltage (VGS) of ±12V, enabling it to excel in low-voltage applications. Its gate threshold voltage (Vth) is -0.6V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 100mΩ at a VGS of 2.5V and 75mΩ at a VGS of 4.5V. It can withstand a maximum drain current (ID) of -4A and is suitable for a variety of power management applications that require high efficiency and compact design.
The F5810-VB is a dual P-channel MOSFET packaged in SOT23-6. Manufactured using advanced Trench technology, this MOSFET is particularly suitable for compact circuits that require dual-channel power switches. The F5810-VB supports a drain-source voltage (VDS) of -20V and a gate voltage (VGS) of ±12V, enabling it to excel in low-voltage applications. Its gate threshold voltage (Vth) is -0.6V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 100mΩ at a VGS of 2.5V and 75mΩ at a VGS of 4.5V. It can withstand a maximum drain current (ID) of -4A and is suitable for a variety of power management applications that require high efficiency and compact design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
F5810-VB MOSFET parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON)）**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON)）**:
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples of F5810-VB MOSFET
1. **Power management**: F5810-VB is very suitable for power management systems in portable electronic devices due to its low on-resistance and dual-channel configuration. For example, in small battery-driven devices such as smartphones and tablets, it can be used as a power switch and battery protection module to provide efficient power switching and energy saving functions.
2. **Load switch**: In applications that require small, efficient load switches, F5810-VB can provide reliable switching functions. It can be used for load switches in portable devices and small circuits, such as LED drive circuits and small motor control modules.
3. **Portable electronic devices**: The compact package and low on-resistance of F5810-VB make it suitable for power management and load switching functions in portable electronic products such as Bluetooth headsets, smart watches and other devices. Its dual P-channel configuration allows for effective power control in compact circuit designs.
4. **Automotive electronics**: In automotive electronic systems, F5810-VB can be used for small power switches and load protection applications. For example, it can be used as a switch in an on-board battery management system to provide reliable power switching and protection functions to meet the high requirements and miniaturization design needs of automotive electronic systems.
1. **Power management**: F5810-VB is very suitable for power management systems in portable electronic devices due to its low on-resistance and dual-channel configuration. For example, in small battery-driven devices such as smartphones and tablets, it can be used as a power switch and battery protection module to provide efficient power switching and energy saving functions.
2. **Load switch**: In applications that require small, efficient load switches, F5810-VB can provide reliable switching functions. It can be used for load switches in portable devices and small circuits, such as LED drive circuits and small motor control modules.
3. **Portable electronic devices**: The compact package and low on-resistance of F5810-VB make it suitable for power management and load switching functions in portable electronic products such as Bluetooth headsets, smart watches and other devices. Its dual P-channel configuration allows for effective power control in compact circuit designs.
4. **Automotive electronics**: In automotive electronic systems, F5810-VB can be used for small power switches and load protection applications. For example, it can be used as a switch in an on-board battery management system to provide reliable power switching and protection functions to meet the high requirements and miniaturization design needs of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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