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F5803G-VB Product details
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F5803G-VB SOT23-6 MOSFET Product Introduction
The F5803G-VB is a high-performance single P-channel power MOSFET in a SOT23-6 package, designed for low-voltage applications in compact electronic devices. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, making it suitable for stable operation in small circuits. This MOSFET uses Trench process technology to provide a threshold voltage (Vth) of -1.7V, an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and a maximum drain current (ID) of up to -4.8A. The design of the F5803G-VB enables it to perform well in low-voltage and compact space applications, and is suitable for a variety of scenarios requiring high efficiency and low power consumption.
The F5803G-VB is a high-performance single P-channel power MOSFET in a SOT23-6 package, designed for low-voltage applications in compact electronic devices. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, making it suitable for stable operation in small circuits. This MOSFET uses Trench process technology to provide a threshold voltage (Vth) of -1.7V, an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and a maximum drain current (ID) of up to -4.8A. The design of the F5803G-VB enables it to perform well in low-voltage and compact space applications, and is suitable for a variety of scenarios requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
F5803G-VB MOSFET Detailed parameter description
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Single-P-Channel (Single-P-Channel)
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): **
- 54mΩ@VGS=4.5V
- 49mΩ@VGS=10V
- **Maximum drain current (ID): ** -4.8A
- **Technology (Technology): ** Trench
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Single-P-Channel (Single-P-Channel)
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): **
- 54mΩ@VGS=4.5V
- 49mΩ@VGS=10V
- **Maximum drain current (ID): ** -4.8A
- **Technology (Technology): ** Trench
Domain and module applications：
F5803G-VB MOSFET Application Fields and Module Examples
F5803G-VB MOSFET is suitable for various low-voltage and high-efficiency application scenarios due to its high efficiency and low on-resistance. For example, in **low-voltage power switches**, it can be used as a switching element to provide efficient current control and low power consumption performance, suitable for mobile devices or compact circuit boards. In **load switching circuits**, F5803G-VB can effectively control the switching operation of low-voltage loads, suitable for small power management modules. In addition, it is also suitable for **battery protection circuits**, which can provide reliable current switching when the battery is overcharged or over-discharged, protecting the safety of the battery and the system. Due to its SOT23-6 package, F5803G-VB is also very suitable for use in space-constrained applications, ensuring the compactness and reliability of circuit design.
F5803G-VB MOSFET is suitable for various low-voltage and high-efficiency application scenarios due to its high efficiency and low on-resistance. For example, in **low-voltage power switches**, it can be used as a switching element to provide efficient current control and low power consumption performance, suitable for mobile devices or compact circuit boards. In **load switching circuits**, F5803G-VB can effectively control the switching operation of low-voltage loads, suitable for small power management modules. In addition, it is also suitable for **battery protection circuits**, which can provide reliable current switching when the battery is overcharged or over-discharged, protecting the safety of the battery and the system. Due to its SOT23-6 package, F5803G-VB is also very suitable for use in space-constrained applications, ensuring the compactness and reliability of circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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