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F5802-VB Product details
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Product Introduction
F5802-VB is a high-performance single N-channel MOSFET with SOT23-6 package type. Designed to handle medium voltage and current applications, this MOSFET has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3.2A. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 105mΩ@VGS=4.5V and 95mΩ@VGS=10V. Using Trench technology, the F5802-VB provides good switching performance while maintaining low conduction losses, making it an ideal choice for many small power management and switching applications.
F5802-VB is a high-performance single N-channel MOSFET with SOT23-6 package type. Designed to handle medium voltage and current applications, this MOSFET has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3.2A. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 105mΩ@VGS=4.5V and 95mΩ@VGS=10V. Using Trench technology, the F5802-VB provides good switching performance while maintaining low conduction losses, making it an ideal choice for many small power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 105mΩ @ VGS=4.5V
- 95mΩ @ VGS=10V
- **Continuous drain current (ID)**: 3.2A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 105mΩ @ VGS=4.5V
- 95mΩ @ VGS=10V
- **Continuous drain current (ID)**: 3.2A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
F5802-VB MOSFET is widely used in the following fields and modules due to its compact package and good electrical performance:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, F5802-VB can be used for power switching and power management. Its small SOT23-6 package fits into compact design spaces while being able to handle small currents and medium voltage applications.
2. **Battery management system**: In battery management systems, F5802-VB is used to control the charging and discharging process. Its low on-resistance and high voltage handling capability enable it to effectively manage the power flow of the battery, ensuring the safety and efficiency of the battery.
3. **Switching power supply**: In small switching power supplies and DC-DC converters, this MOSFET is used as a switching element, providing efficient current switching and stable voltage output, suitable for scenarios requiring high-frequency switching operations.
4. **Automotive electronics**: In automotive electronic systems, such as vehicle control modules and lighting control systems, the F5802-VB can be used as a switching element to help manage current and improve system reliability.
The small package, high voltage handling capability and low on-resistance of the F5802-VB MOSFET make it an efficient and reliable choice in these applications.
F5802-VB MOSFET is widely used in the following fields and modules due to its compact package and good electrical performance:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, F5802-VB can be used for power switching and power management. Its small SOT23-6 package fits into compact design spaces while being able to handle small currents and medium voltage applications.
2. **Battery management system**: In battery management systems, F5802-VB is used to control the charging and discharging process. Its low on-resistance and high voltage handling capability enable it to effectively manage the power flow of the battery, ensuring the safety and efficiency of the battery.
3. **Switching power supply**: In small switching power supplies and DC-DC converters, this MOSFET is used as a switching element, providing efficient current switching and stable voltage output, suitable for scenarios requiring high-frequency switching operations.
4. **Automotive electronics**: In automotive electronic systems, such as vehicle control modules and lighting control systems, the F5802-VB can be used as a switching element to help manage current and improve system reliability.
The small package, high voltage handling capability and low on-resistance of the F5802-VB MOSFET make it an efficient and reliable choice in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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