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F5800-VB Product details
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F5800-VB MOSFET Product Introduction
F5800-VB is a single P-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency switching applications. Its maximum drain-source voltage (VDS) is -30V, and the gate-source voltage (VGS) supports ±20V. The gate threshold voltage (Vth) of F5800-VB is -1.7V, with an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V. This MOSFET can carry a continuous drain current (ID) of up to -4.8A, and uses trench technology to provide high-efficiency and low-power solutions in various switching applications.
F5800-VB is a single P-channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency switching applications. Its maximum drain-source voltage (VDS) is -30V, and the gate-source voltage (VGS) supports ±20V. The gate threshold voltage (Vth) of F5800-VB is -1.7V, with an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V and 49mΩ at VGS=10V. This MOSFET can carry a continuous drain current (ID) of up to -4.8A, and uses trench technology to provide high-efficiency and low-power solutions in various switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
F5800-VB Detailed parameter description
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): **
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID): ** -4.8A
- **Technology type (Technology): ** Trench Technology
- **Package type (Package): ** SOT23-6
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): **
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID): ** -4.8A
- **Technology type (Technology): ** Trench Technology
Domain and module applications：
Application fields and module examples
The high efficiency and low power consumption characteristics of F5800-VB MOSFET make it excel in multiple application fields and modules. Here are some typical application examples:
1. **Low voltage switching circuit**: In low voltage switching circuits, F5800-VB can be used as a switching element, especially in scenarios where high efficiency and low power consumption are required. Its low on-resistance helps reduce power loss and improve the overall efficiency of the circuit.
2. **Power management**: In various power management applications, such as power distribution and load switching, F5800-VB can effectively control the flow of current and provide stable power output. Its small SOT23-6 package is suitable for compact circuit design.
3. **Portable devices**: In portable devices, such as smartphones and small electronic products, F5800-VB can be used for battery protection and power switching applications. Its high efficiency characteristics help extend battery life and improve the operating efficiency of the device.
4. **Automotive electronics**: In automotive electronic systems, such as control modules and on-board switches, the F5800-VB can be used for load control and power switching applications. Its high current carrying capacity and low on-resistance ensure the reliability and stability of the system.
The low on-resistance and trench technology of the F5800-VB make it an ideal choice for a variety of low-voltage, high-performance applications, providing an efficient and stable power switching solution.
The high efficiency and low power consumption characteristics of F5800-VB MOSFET make it excel in multiple application fields and modules. Here are some typical application examples:
1. **Low voltage switching circuit**: In low voltage switching circuits, F5800-VB can be used as a switching element, especially in scenarios where high efficiency and low power consumption are required. Its low on-resistance helps reduce power loss and improve the overall efficiency of the circuit.
2. **Power management**: In various power management applications, such as power distribution and load switching, F5800-VB can effectively control the flow of current and provide stable power output. Its small SOT23-6 package is suitable for compact circuit design.
3. **Portable devices**: In portable devices, such as smartphones and small electronic products, F5800-VB can be used for battery protection and power switching applications. Its high efficiency characteristics help extend battery life and improve the operating efficiency of the device.
4. **Automotive electronics**: In automotive electronic systems, such as control modules and on-board switches, the F5800-VB can be used for load control and power switching applications. Its high current carrying capacity and low on-resistance ensure the reliability and stability of the system.
The low on-resistance and trench technology of the F5800-VB make it an ideal choice for a variety of low-voltage, high-performance applications, providing an efficient and stable power switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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