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F50N06LE-VB Product details
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F50N06LE-VB MOSFET Product Introduction
The F50N06LE-VB is a single N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced trench technology and has a very low on-resistance of 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. This low on-resistance and high current carrying capacity make it excel in high-efficiency circuits, capable of providing up to 75A of continuous drain current (ID). The F50N06LE-VB is suitable for applications requiring high current and low power consumption.
The F50N06LE-VB is a single N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced trench technology and has a very low on-resistance of 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. This low on-resistance and high current carrying capacity make it excel in high-efficiency circuits, capable of providing up to 75A of continuous drain current (ID). The F50N06LE-VB is suitable for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F50N06LE-VB Detailed parameter description
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID): ** 75A
- **Technology type (Technology): ** Trench technology (Trench Technology)
- **Package type (Package): ** TO263
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID): ** 75A
- **Technology type (Technology): ** Trench technology (Trench Technology)
Domain and module applications：
Application fields and module examples
The high current carrying capacity and low on-resistance of F50N06LE-VB MOSFET make it outstanding in many fields and modules. Here are some typical application examples:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, F50N06LE-VB can be used as a switching element. Its low on-resistance can reduce energy loss and improve power conversion efficiency, making it suitable for high-efficiency power supply design.
2. **Motor drive**: In the motor drive system of electric vehicles and power tools, the high current handling capability of this MOSFET can effectively drive the motor, provide stable power output, and improve the performance and reliability of electric equipment.
3. **Battery protection circuit**: F50N06LE-VB can be used as a protection switch in the battery management system to achieve overcurrent protection and switch control of the battery. Its low on-resistance helps to extend battery life and improve charging and discharging efficiency.
4. **Industrial Automation**: In industrial automation systems, F50N06LE-VB can be used to drive high-power loads, such as servo motors and power control of automation equipment, to ensure efficient operation and reliability of the system.
The excellent performance and wide application of F50N06LE-VB make it an ideal choice for various high-current, high-efficiency circuit designs.
The high current carrying capacity and low on-resistance of F50N06LE-VB MOSFET make it outstanding in many fields and modules. Here are some typical application examples:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, F50N06LE-VB can be used as a switching element. Its low on-resistance can reduce energy loss and improve power conversion efficiency, making it suitable for high-efficiency power supply design.
2. **Motor drive**: In the motor drive system of electric vehicles and power tools, the high current handling capability of this MOSFET can effectively drive the motor, provide stable power output, and improve the performance and reliability of electric equipment.
3. **Battery protection circuit**: F50N06LE-VB can be used as a protection switch in the battery management system to achieve overcurrent protection and switch control of the battery. Its low on-resistance helps to extend battery life and improve charging and discharging efficiency.
4. **Industrial Automation**: In industrial automation systems, F50N06LE-VB can be used to drive high-power loads, such as servo motors and power control of automation equipment, to ensure efficient operation and reliability of the system.
The excellent performance and wide application of F50N06LE-VB make it an ideal choice for various high-current, high-efficiency circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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