中文
English
F45N02L-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**F45N02L-VB** is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed to provide low on-resistance and high current handling capability for high-efficiency switching applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses Trench technology to increase switching speed and reduce on-resistance. F45N02L-VB is particularly suitable for applications that require high current and high efficiency.
**F45N02L-VB** is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed to provide low on-resistance and high current handling capability for high-efficiency switching applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses Trench technology to increase switching speed and reduce on-resistance. F45N02L-VB is particularly suitable for applications that require high current and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: F45N02L-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ (VGS = 4.5V)
- 12mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Model**: F45N02L-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ (VGS = 4.5V)
- 12mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
**1. Power management: **
The low RDS(ON) characteristics of F45N02L-VB make it an excellent performer in power management modules, especially in DC-DC converters and switching power supplies. Its high current handling capability can effectively reduce power consumption and improve conversion efficiency.
**2. Electric vehicles (EV): **
In the battery management system and motor drive module of electric vehicles, F45N02L-VB can provide stable high-current switching capability. Its low on-resistance helps reduce energy loss and improve the overall performance and endurance of electric vehicles.
**3. Industrial control: **
This MOSFET is suitable for high-power switching applications in industrial control systems, such as motor drive and load control. Its reliable high current handling capability and low on-resistance ensure the efficient operation and stability of industrial equipment.
**4. Communication equipment: **
In the power management module of communication equipment, the low RDS(ON) characteristics of F45N02L-VB can effectively reduce power consumption and improve the stability of the equipment. It is particularly suitable for base stations and network equipment that require high current switching.
**5. Consumer electronics: **
In consumer electronic devices, such as battery-powered devices and high-performance computer hardware, F45N02L-VB can provide an efficient power switching solution. Its high current capability and low on-resistance make it an ideal choice for these applications.
**1. Power management: **
The low RDS(ON) characteristics of F45N02L-VB make it an excellent performer in power management modules, especially in DC-DC converters and switching power supplies. Its high current handling capability can effectively reduce power consumption and improve conversion efficiency.
**2. Electric vehicles (EV): **
In the battery management system and motor drive module of electric vehicles, F45N02L-VB can provide stable high-current switching capability. Its low on-resistance helps reduce energy loss and improve the overall performance and endurance of electric vehicles.
**3. Industrial control: **
This MOSFET is suitable for high-power switching applications in industrial control systems, such as motor drive and load control. Its reliable high current handling capability and low on-resistance ensure the efficient operation and stability of industrial equipment.
**4. Communication equipment: **
In the power management module of communication equipment, the low RDS(ON) characteristics of F45N02L-VB can effectively reduce power consumption and improve the stability of the equipment. It is particularly suitable for base stations and network equipment that require high current switching.
**5. Consumer electronics: **
In consumer electronic devices, such as battery-powered devices and high-performance computer hardware, F45N02L-VB can provide an efficient power switching solution. Its high current capability and low on-resistance make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
