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F40NF03L-VB Product details
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F40NF03L-VB MOSFET Product Introduction
The F40NF03L-VB is a single N-channel MOSFET in a TO220F package with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is 2mΩ at VGS=4.5V and as low as 1mΩ at VGS=10V. This low on-resistance enables it to excel in high-current applications, capable of providing up to 68A of continuous drain current (ID). The trench technology used provides a high-efficiency and low-power solution for applications requiring high current handling capabilities and low conduction losses.
The F40NF03L-VB is a single N-channel MOSFET in a TO220F package with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is 2mΩ at VGS=4.5V and as low as 1mΩ at VGS=10V. This low on-resistance enables it to excel in high-current applications, capable of providing up to 68A of continuous drain current (ID). The trench technology used provides a high-efficiency and low-power solution for applications requiring high current handling capabilities and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F40NF03L-VB Detailed parameter description
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 2mΩ @ VGS=4.5V
- 1mΩ @ VGS=10V
- **Drain current (ID): ** 68A
- **Technology type (Technology): ** Trench Technology
- **Package type (Package): ** TO220F
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 2mΩ @ VGS=4.5V
- 1mΩ @ VGS=10V
- **Drain current (ID): ** 68A
- **Technology type (Technology): ** Trench Technology
Domain and module applications：
Applications and module examples
The F40NF03L-VB MOSFET has extremely low on-resistance and high current carrying capacity, making it suitable for a variety of high-performance applications. Here are a few typical application examples:
1. **Power converter**: In switch mode power supplies (SMPS) and DC-DC converters, the F40NF03L-VB can be used as a switching element to provide efficient power conversion. Its low on-resistance reduces power consumption and heat, improving the overall efficiency of the system.
2. **Electric drive system**: In the motor drive module of electric vehicles or power tools, this MOSFET can handle high current loads, ensure smooth and efficient motor operation, and improve the reliability and performance of the overall power system.
3. **Battery management system**: The F40NF03L-VB can be used as a power switch in the battery management system to control battery charging and discharging. Its low on-resistance ensures efficient charging and discharging of the battery, extending battery life and improving system safety.
4. **Power amplifier**: In high-power RF power amplifiers, this MOSFET can effectively amplify signals due to its excellent conduction characteristics, and is suitable for various communication systems and signal processing applications.
The high current handling capability and low on-resistance of the F40NF03L-VB give it a significant performance advantage in these fields, providing a reliable solution for high-performance electronic products.
The F40NF03L-VB MOSFET has extremely low on-resistance and high current carrying capacity, making it suitable for a variety of high-performance applications. Here are a few typical application examples:
1. **Power converter**: In switch mode power supplies (SMPS) and DC-DC converters, the F40NF03L-VB can be used as a switching element to provide efficient power conversion. Its low on-resistance reduces power consumption and heat, improving the overall efficiency of the system.
2. **Electric drive system**: In the motor drive module of electric vehicles or power tools, this MOSFET can handle high current loads, ensure smooth and efficient motor operation, and improve the reliability and performance of the overall power system.
3. **Battery management system**: The F40NF03L-VB can be used as a power switch in the battery management system to control battery charging and discharging. Its low on-resistance ensures efficient charging and discharging of the battery, extending battery life and improving system safety.
4. **Power amplifier**: In high-power RF power amplifiers, this MOSFET can effectively amplify signals due to its excellent conduction characteristics, and is suitable for various communication systems and signal processing applications.
The high current handling capability and low on-resistance of the F40NF03L-VB give it a significant performance advantage in these fields, providing a reliable solution for high-performance electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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