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F3711ZS-VB Product details
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F3711ZS-VB MOSFET Product Introduction
The F3711ZS-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for high-power and high-efficiency applications. The MOSFET has a very low on-resistance and excellent conductivity, making it an excellent performer in switching and power control applications. It uses advanced Trench technology to ensure low power consumption and high efficiency at high currents.
The F3711ZS-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for high-power and high-efficiency applications. The MOSFET has a very low on-resistance and excellent conductivity, making it an excellent performer in switching and power control applications. It uses advanced Trench technology to ensure low power consumption and high efficiency at high currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
F3711ZS-VB MOSFET is suitable for the following fields and modules:
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management system of electric vehicles, F3711ZS-VB can be used for efficient battery charge and discharge control, and as the main switching element in the power inverter to ensure efficient energy conversion.
2. **Industrial Power Module**: In industrial power supplies, this MOSFET can be used for efficient DC-DC converters to provide stable output voltage and efficient power transmission.
3. **Computer and Server Power**: Due to its low on-resistance and high current capability, F3711ZS-VB plays an important role in power management modules for efficient servers and data centers, helping to reduce system power consumption and improve overall efficiency.
4. **Photovoltaic Inverter**: In solar photovoltaic systems, it can be used as the main switching element of the inverter to support efficient DC to AC power conversion and improve the energy utilization of the system.
Through these application examples, it can be seen that the F3711ZS-VB MOSFET is very suitable for scenarios requiring high current handling capability and low conduction loss, and is widely used in power electronics and high-efficiency systems.
F3711ZS-VB MOSFET is suitable for the following fields and modules:
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery management system of electric vehicles, F3711ZS-VB can be used for efficient battery charge and discharge control, and as the main switching element in the power inverter to ensure efficient energy conversion.
2. **Industrial Power Module**: In industrial power supplies, this MOSFET can be used for efficient DC-DC converters to provide stable output voltage and efficient power transmission.
3. **Computer and Server Power**: Due to its low on-resistance and high current capability, F3711ZS-VB plays an important role in power management modules for efficient servers and data centers, helping to reduce system power consumption and improve overall efficiency.
4. **Photovoltaic Inverter**: In solar photovoltaic systems, it can be used as the main switching element of the inverter to support efficient DC to AC power conversion and improve the energy utilization of the system.
Through these application examples, it can be seen that the F3711ZS-VB MOSFET is very suitable for scenarios requiring high current handling capability and low conduction loss, and is widely used in power electronics and high-efficiency systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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