F3709ZS-VB Product details
Product introduction:
The F3709ZS-VB is a high-performance N-channel MOSFET in a TO263 package, designed for applications requiring high current and low on-resistance. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, the device provides stable performance in a variety of power management and switching circuits. Its threshold voltage (Vth) is 1.7V, ensuring that the MOSFET can be turned on reliably at lower gate voltages. The on-resistance (RDS(ON)) is 2.4mΩ at a VGS of 10V and 2.7mΩ at a VGS of 4.5V, allowing it to maintain low power consumption under high current conditions. The maximum continuous drain current (ID) is up to 98A, and Trench technology is used to provide superior switching speed and efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications:
F3709ZS-VB MOSFET has a wide range of applications in the following fields and modules due to its high current capability and low on-resistance:
1. **Power management system**:
In power management systems, F3709ZS-VB can be used for load switching and current regulation circuits. Its low on-resistance makes it suitable for applications requiring high efficiency and low power consumption, helping to improve the overall energy efficiency of the system.
2. **DC-DC converter**:
F3709ZS-VB is very suitable for high-efficiency DC-DC converter applications. Its drain current capability of up to 98A and extremely low on-resistance can handle high current loads, providing higher conversion efficiency and stability.
3. **Power tools and industrial equipment**:
In power tools and industrial equipment, the F3709ZS-VB is used as the main switch, which can effectively reduce power loss while meeting the needs of high current drive, thereby extending the operating time and reliability of the equipment.
4. **Electric vehicle charging system**:
This MOSFET performs well in the battery management and charging system of electric vehicles. Its high current capability and low on-resistance ensure the efficiency and safety of the charging process, making it an ideal choice for electric vehicles and charging infrastructure.
5. **LED drive in lighting systems**:
The F3709ZS-VB can also be used in LED drive circuits, especially in high-power LED lighting applications. Its low on-resistance can significantly reduce heat generation and improve the energy efficiency and life of LED systems.
Overall, the F3709ZS-VB MOSFET demonstrates outstanding performance in multiple fields such as power management, DC-DC converters, power tools, electric vehicle charging systems, and LED drivers. Its high efficiency and high current handling capability make it an ideal choice for a variety of demanding applications.
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