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F3055LESM-VB Product details
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F3055LESM-VB MOSFET Product Introduction
The F3055LESM-VB is a high-performance N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V, suitable for medium voltage switching and amplification applications. The threshold voltage (Vth) of this MOSFET is 1.7V, and it can stably conduct at a lower gate voltage. The F3055LESM-VB uses Trench technology and provides excellent on-resistance characteristics, which is 73mΩ at VGS=10V and the drain current (ID) is as high as 18A. Its high current handling capability and low on-resistance enable it to perform well in applications requiring high-efficiency switching performance.
The F3055LESM-VB is a high-performance N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V, suitable for medium voltage switching and amplification applications. The threshold voltage (Vth) of this MOSFET is 1.7V, and it can stably conduct at a lower gate voltage. The F3055LESM-VB uses Trench technology and provides excellent on-resistance characteristics, which is 73mΩ at VGS=10V and the drain current (ID) is as high as 18A. Its high current handling capability and low on-resistance enable it to perform well in applications requiring high-efficiency switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
F3055LESM-VB MOSFET Detailed parameter description
- **Package type (Package):** TO252
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):** 85mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)):** 73mΩ @ VGS=10V
- **Drain current (ID):** 18A
- **Technology type (Technology):** Trench
- **Package type (Package):** TO252
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):** 85mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)):** 73mΩ @ VGS=10V
- **Drain current (ID):** 18A
- **Technology type (Technology):** Trench
Domain and module applications：
F3055LESM-VB MOSFET Applications and Module Examples
The high current handling capability and low on-resistance characteristics of the F3055LESM-VB MOSFET make it suitable for multiple applications with efficient current switching. Here are some typical application scenarios:
1. **Power Management:** The low on-resistance and high current capability of the F3055LESM-VB make it suitable for power management systems such as DC-DC converters and power distribution modules. In these applications, the efficient switching performance of the MOSFET can effectively reduce power consumption and improve power efficiency.
2. **Motor Drives:** In motor control systems, such as industrial motor drives and electric vehicle motor drives, the F3055LESM-VB is able to handle medium current loads and provide stable switching performance. Its low on-resistance helps reduce energy losses and improve the overall efficiency and reliability of the motor system.
3. **Inverters:** In inverter applications, such as solar inverters and wind power inverters, the F3055LESM-VB is able to handle medium voltage and current loads, ensuring efficient and stable operation of the system. Its excellent switching performance is critical to the efficiency of the inverter.
4. **High-Efficiency Switching Circuits:** In applications that require efficient current switching, such as high-power switching power supplies and high-frequency switching circuits, the low on-resistance and high current capability of the F3055LESM-VB can provide reliable performance, supporting efficient power switching and conversion.
The design and performance characteristics of the F3055LESM-VB MOSFET enable it to excel in high-current, medium-voltage applications, providing an efficient and stable solution for a variety of power management and drive systems.
The high current handling capability and low on-resistance characteristics of the F3055LESM-VB MOSFET make it suitable for multiple applications with efficient current switching. Here are some typical application scenarios:
1. **Power Management:** The low on-resistance and high current capability of the F3055LESM-VB make it suitable for power management systems such as DC-DC converters and power distribution modules. In these applications, the efficient switching performance of the MOSFET can effectively reduce power consumption and improve power efficiency.
2. **Motor Drives:** In motor control systems, such as industrial motor drives and electric vehicle motor drives, the F3055LESM-VB is able to handle medium current loads and provide stable switching performance. Its low on-resistance helps reduce energy losses and improve the overall efficiency and reliability of the motor system.
3. **Inverters:** In inverter applications, such as solar inverters and wind power inverters, the F3055LESM-VB is able to handle medium voltage and current loads, ensuring efficient and stable operation of the system. Its excellent switching performance is critical to the efficiency of the inverter.
4. **High-Efficiency Switching Circuits:** In applications that require efficient current switching, such as high-power switching power supplies and high-frequency switching circuits, the low on-resistance and high current capability of the F3055LESM-VB can provide reliable performance, supporting efficient power switching and conversion.
The design and performance characteristics of the F3055LESM-VB MOSFET enable it to excel in high-current, medium-voltage applications, providing an efficient and stable solution for a variety of power management and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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