F2807L-VB TO262 Product details
Product introduction:
The F2807L-VB is a high-performance unipolar N-channel MOSFET in TO262 package. It has a drain-source voltage (VDS) handling capability of 80V and a gate-source voltage (VGS) handling capability of ±20V, suitable for medium and high voltage applications. The threshold voltage (Vth) of this MOSFET is 3V, ensuring stable switching at lower gate voltages. The F2807L-VB uses Trench technology, providing excellent on-resistance of 6mΩ at VGS=10V and a drain current (ID) of up to 85A. Its high current handling capability and low on-resistance make it excel in applications that require efficient current switching.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package type (Package):** TO262
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 10mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)):** 6mΩ @ VGS=10V
- **Drain current (ID):** 85A
- **Technology type (Technology):** Trench
Domain and module applications:
The high current and low on-resistance characteristics of the F2807L-VB MOSFET make it ideal for multiple applications with efficient current switching. Here are a few typical application scenarios:
1. **Power Management:** The low on-resistance and high current handling capability of the F2807L-VB make it suitable for efficient power management systems such as DC-DC converters and power distribution modules. These applications require the MOSFET to provide high efficiency and low power consumption in switching operations, thereby improving the efficiency of the overall system.
2. **Motor Drives:** In motor control systems, such as industrial motor drives and electric vehicle drive systems, the F2807L-VB is able to handle high current loads and provide stable switching performance. Its low on-resistance helps reduce power consumption and improve the thermal management efficiency of the system.
3. **Inverters:** In various inverter applications, such as solar inverters and wind power inverters, the F2807L-VB can handle high current and medium voltage loads. Its efficient switching performance ensures the reliability and stability of the inverter system.
4. **High-Efficiency Power Switching:** In high-efficiency power switching applications, such as high-power switching power supplies and high-frequency switching circuits, the low on-resistance and high current capability of the F2807L-VB can provide excellent performance and support efficient power conversion and management.
The excellent performance of the F2807L-VB MOSFET makes it ideal in applications that require high current and high efficiency, and can meet the needs of a variety of high-performance power supplies and switching systems.
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