中文
English
F25NM60N-VB Product details
Back to previous pageProduct introduction：
F25NM60N-VB MOSFET Product Introduction
The F25NM60N-VB is a high-voltage, high-current unipolar N-channel MOSFET packaged in TO220F. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) handling capability of ±30V, suitable for applications in high-voltage environments. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction at lower gate voltages. The F25NM60N-VB uses SJ_Multi-EPI technology and has a medium on-resistance of 160mΩ at VGS=10V and a drain current (ID) of up to 20A. This design makes it suitable for handling high voltage and high current loads, especially in power management and switching applications that require high voltage resistance and reliability.
The F25NM60N-VB is a high-voltage, high-current unipolar N-channel MOSFET packaged in TO220F. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) handling capability of ±30V, suitable for applications in high-voltage environments. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction at lower gate voltages. The F25NM60N-VB uses SJ_Multi-EPI technology and has a medium on-resistance of 160mΩ at VGS=10V and a drain current (ID) of up to 20A. This design makes it suitable for handling high voltage and high current loads, especially in power management and switching applications that require high voltage resistance and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F25NM60N-VB MOSFET Detailed parameter description
- **Package type (Package):** TO220F
- **Configuration (Configuration):** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain current (ID):** 20A
- **Technology type (Technology):** SJ_Multi-EPI
- **Package type (Package):** TO220F
- **Configuration (Configuration):** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain current (ID):** 20A
- **Technology type (Technology):** SJ_Multi-EPI
Domain and module applications：
F25NM60N-VB MOSFET Applications and Module Examples
The high voltage and high current handling capabilities of the F25NM60N-VB MOSFET enable it to excel in multiple high voltage applications. Here are a few typical application scenarios:
1. **High-Voltage Power Switching:** Due to its drain-source voltage capability of up to 650V, the F25NM60N-VB is suitable for high-voltage power switching systems such as industrial power supplies, medical equipment power supplies, and high-power power adapters. It can reliably handle high voltage loads, ensuring the stability and efficiency of the power system.
2. **Inverters:** In solar inverters, wind power inverters, and other power inverter applications, the F25NM60N-VB can provide stable high voltage and high current handling capabilities, support efficient power conversion, and ensure the long-term reliability of the system.
3. **Motor Drives:** In high-voltage motor drive systems, such as industrial motor drives and electric vehicle drive systems, the F25NM60N-VB is able to handle high-voltage loads and provide strong current switching capabilities to ensure efficient and stable motor control.
4. **High-Voltage Power Management:** In applications that require high-voltage power management, such as battery management systems and high-voltage power distribution modules, the high-voltage and high-current capabilities of the F25NM60N-VB make it suitable for efficient power switching and management, providing reliable solutions.
The design characteristics of the F25NM60N-VB MOSFET make it ideal in applications that handle high-voltage and high-power loads, providing reliable performance and efficient solutions.
The high voltage and high current handling capabilities of the F25NM60N-VB MOSFET enable it to excel in multiple high voltage applications. Here are a few typical application scenarios:
1. **High-Voltage Power Switching:** Due to its drain-source voltage capability of up to 650V, the F25NM60N-VB is suitable for high-voltage power switching systems such as industrial power supplies, medical equipment power supplies, and high-power power adapters. It can reliably handle high voltage loads, ensuring the stability and efficiency of the power system.
2. **Inverters:** In solar inverters, wind power inverters, and other power inverter applications, the F25NM60N-VB can provide stable high voltage and high current handling capabilities, support efficient power conversion, and ensure the long-term reliability of the system.
3. **Motor Drives:** In high-voltage motor drive systems, such as industrial motor drives and electric vehicle drive systems, the F25NM60N-VB is able to handle high-voltage loads and provide strong current switching capabilities to ensure efficient and stable motor control.
4. **High-Voltage Power Management:** In applications that require high-voltage power management, such as battery management systems and high-voltage power distribution modules, the high-voltage and high-current capabilities of the F25NM60N-VB make it suitable for efficient power switching and management, providing reliable solutions.
The design characteristics of the F25NM60N-VB MOSFET make it ideal in applications that handle high-voltage and high-power loads, providing reliable performance and efficient solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
