F25NM50N-VB Product details
Product introduction:
F25NM50N-VB is a high voltage N-channel MOSFET packaged in TO220F, designed for high voltage, high power applications. Its drain-source voltage (VDS) is 500V, suitable for stable operation in high voltage environments. The gate-source voltage (VGS) range of this MOSFET is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring stable turn-on at standard gate voltage. The on-resistance (RDS(ON)) of the F25NM50N-VB is 140mΩ at VGS of 10V, and its maximum continuous drain current (ID) is 30A. Using SJ_Multi-EPI technology, the F25NM50N-VB provides excellent high voltage performance and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 140mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
The F25NM50N-VB MOSFET excels in multiple high voltage and high power applications due to its high voltage and high power handling capabilities:
1. **High Voltage Power Switch**: The F25NM50N-VB is suitable for high voltage power switching systems, including high voltage DC-DC converters and switching power supplies. Its 500V drain-source voltage capability enables it to stably handle high voltages, reduce switching losses, and improve the efficiency of the power system.
2. **Power Inverter**: In power inverter applications, the F25NM50N-VB can be used as a high voltage switching element to handle high power currents. Its high voltage and high current carrying capabilities are critical to the stability and performance of the inverter.
3. **Electrical Equipment Protection**: The F25NM50N-VB can be used as a protection switch in high voltage electrical equipment to prevent damage to the equipment due to overvoltage or short circuit conditions. Its high voltage withstand capability and low on-resistance can effectively protect electrical equipment.
4. **Industrial power supply**: In industrial power supply systems, F25NM50N-VB is suitable as a switching element to control the switching and regulation of power supply. Its high current handling capability and high voltage withstand characteristics can meet the needs of industrial applications and ensure the stability of the system.
5. **High-voltage power switch**: F25NM50N-VB is widely used in various high-voltage power switching circuits, including power supplies and power electronic equipment. Its excellent high-voltage performance and high-current handling capability make it perform well in these applications.
In summary, F25NM50N-VB MOSFET is widely used in many fields and modules such as high-voltage power switches, power inverters, electrical equipment protection, industrial power supplies and high-voltage power switches due to its high voltage withstand capability, low on-resistance and high reliability.
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